Patents by Inventor M. Y. Wu

M. Y. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FORMING TRANSISTORS WITH HIGH-K DIELECTRIC LAYERS AND TRANSISTORS FORMED THEREFROM
    Publication number: 20080254588
    Abstract: A method for forming a semiconductor structure includes forming a gate dielectric layer over a substrate. A top surface of the gate dielectric layer is treated so as to at least partially nitridize the gate dielectric layer. The treated gate dielectric layer is thermally treated with an oxygen-containing precursor such that the at least partially nitridized gate dielectric layer has a nitrogen concentration between about 0.5 atomic percentage (at. %) and about 20 at %.
    Type: Application
    Filed: April 16, 2007
    Publication date: October 16, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Harry Chuang, Kong-Beng Thei, Hung-Chih Tsai, M. Y. Wu, Mong-Song Liang