Abstract: Disclosed herein are source/drain regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: an array of channel regions, including a first channel region and an adjacent second channel region; a first source/drain region proximate to the first channel region; a second source/drain region proximate to the second channel region; and an insulating material region at least partially between the first source/drain region and the second source/drain region.

Abstract: Discussed herein are device contacts in integrated circuit (IC) structures. In some embodiments, an IC structure may include: a first source/drain (S/D) contact; a gate contact, wherein the gate contact is in contact with a gate and with the first S/D contact; and a second S/D contact, wherein a height of the second S/D contact is less than a height of the first S/D contact.

Abstract: Disclosed herein are source/drain regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: an array of channel regions, including a first channel region and an adjacent second channel region; a first source/drain region proximate to the first channel region; a second source/drain region proximate to the second channel region; and an insulating material region at least partially between the first source/drain region and the second source/drain region.

Abstract: A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n+-p?-p+ laminate on the titanium-based layer, passivating the n+-p?-p+ laminate, providing an n-i-p laminate on the n+-p?-p+ laminate, providing a p-type ohmic contact, providing an n-type ohmic contact providing an anti-reflection layer of SiCN/SiO2 on the n-i-p laminate.

Abstract: Fused tri-heterocyclic compounds of formula: R1 is H or alkyl; R2 is H, alkyl, alkenyl, aryl, heteroaryl, cyclyl, or heterocyclyl; R3 and R4, independently, is H, alkyl, alkenyl, aryl, heteroaryl, cyclyl, heterocyclyl, or (CRaRb)mX(CRcRd)nY; in which X is a bond, O, S, or NRe; Y is alkoxy, aryloxy, heteroaryloxy, OC(O)Re, C(O)Re, N(ReRe?), NReC(O)Re?, S(O)2Re, or SRe; each of m and n, independently, is 1, 2, 3, 4, or 5; each of Ra, Rb, Rc, Rd, Re, and Re?, independently, is H, alkyl, aryl, heteroaryl, cyclyl, or heterocyclyl; and R5 is H or halogen.

Abstract: Fused tri-heterocyclic compounds of formula: 1

Abstract: A pitch synchronous sinusoidal synthesizer for multi-band excitation vocoders will produce excitation signals necessary to artificially mimic speech from input data. The input data will contain the pitch frequencies for current and previous synthesizing frame samples, starting phase information for all harmonics within the current synthesizing frame sample, magnitudes for each of the harmonics present within the current synthesizing frame sample, the voiced/unvoiced decisions for each of the harmonics within the current frame sample, and an energy description for the harmonics of the current synthesizing frame sample. The pitch synchronous sinusoidal synthesizer will produce the synthetic speech with a minimum of the distortion caused by the sampling and regeneration of the speech excitation signals. The pitch synchronized sinusoidal synthesizer has a plurality of pitch interpolators.

Abstract: A method and means to estimate the pitch of a speech or acoustic signal within a vocoder begins with the center clipping and low-pass filtering of the speech or acoustic signal to eliminate the formants from the speech or acoustic signal. An error function for each pitch is calculated for each pitch within the speech or acoustic signal. A fast tracking method is used to select the estimated pitch for the pitch or acoustic signal. A final check for the doubling of the pitch will minimize any incorrect estimation of the pitch.