Patents by Inventor Maarten J. Swanenberg

Maarten J. Swanenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low Cost LF Driver Current Sense Topology
    Publication number: 20200014345
    Abstract: A switching amplifier circuit (200) connected to drive an impedance-based output load (230) includes high side and low side switches (201-204) configured and connected to connect first and second supply voltage lines to first and second output nodes (ANTP, ANTN) in response to gating control signals, and also includes an output current sensing circuit for measuring a current through the output load with a current sensing resistor (Rs) connected between the second supply voltage line and a source of one or more split gate-source switching transistors (203C) in the low side gate-source switching transistor, where a voltage sense circuit connected across the current sensing resistor is configured to sample a voltage across the current sensing resistor for measuring a sense current at the current sensing resistor.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 9, 2020
    Applicant: NXP B.V.
    Inventors: Hermanus J. Effing, Dimitar M. Dochev, Maarten J. Swanenberg
  • Low cost LF driver current sense topology
    Patent number: 10516372
    Abstract: A switching amplifier circuit (200) connected to drive an impedance-based output load (230) includes high side and low side switches (201-204) configured and connected to connect first and second supply voltage lines to first and second output nodes (ANTP, ANTN) in response to gating control signals, and also includes an output current sensing circuit for measuring a current through the output load with a current sensing resistor (Rs) connected between the second supply voltage line and a source of one or more split gate-source switching transistors (203C) in the low side gate-source switching transistor, where a voltage sense circuit connected across the current sensing resistor is configured to sample a voltage across the current sensing resistor for measuring a sense current at the current sensing resistor.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: December 24, 2019
    Assignee: NXP B.V.
    Inventors: Hermanus J. Effing, Dimitar M. Dochev, Maarten J. Swanenberg
  • Edge termination for semiconductor device
    Patent number: 7859076
    Abstract: A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: December 28, 2010
    Assignee: NXP B.V.
    Inventors: Rob Van Dalen, Maarten J. Swanenberg