Abstract: A device for emitting radiation at a predetermined wavelength is presented. This device has a cavity with an active layer in which said radiation is generated by charge carrier recombination. The edges of the device define the region or space for radiation and/or charge carrier confinement. At least one of the edges of this cavity has a substantially random grating structure. The edge of the device has substantially random grating structure and can extend as at least one edge of a waveguide forming part of this radiation emitting device. The radiation emitting device of the present invention can have a cavity comprising a radiation confinement space that includes confinement features for the charge carriers confining the charge carriers to a subspace being smaller than the radiation confinement space within the cavity. The emitting device can comprise at least two edges forming, in cross-section, a substantially triangular shape. The angle between these two edges is smaller than 45°.

Abstract: A driver circuit can be used to drive a matrix display device, such as a liquid crystal display, that includes a plurality of pixels 16 disposed in rows 12 and columns 14. A first switch 328 has a current path coupled between a high voltage node (e.g., VS) and a group of pixels 16. As an example, the group of pixels 16 can be a row 12 or a column 14. A second switch 326 has a current path coupled between a low voltage node (e.g., ground) the group of pixels 16. A third switch 322 has a current path coupled between an inductive storage element 34 and the group of pixels. The inductive storage element 34 is coupled to an intermediate voltage node (e.g., VS/2) with a voltage between the voltage at the high voltage node and the voltage at the low voltage node.

Abstract: The present invention discloses a highly efficient light emitting diode with directional properties comprising a light cavity of semiconductor material. A portion of the surface of the light cavity acts as a parabolic shaped reflector. A light generation zone is located substantially at the focal point of this paraboloid reflector. The light out-coupling interface of the cavity is close to the focal point allowing both downward and upward generated photons to escape from the semiconductor cavity. Photons reach the out-coupling interface in perpendicular way within the out-coupling cone of the semiconductor-surrounding medium interface.

Abstract: It is an object of the present invention to disclose a fully differential OTA. The active loads in the two output branches of the OTA show high conductance at low frequency and low conductance at higher frequency. In this way an OTA is constructed with inherent pass-band. Low frequencies are amplified little or even filtered out. The amplification of input referred offset voltage due to mismatches in transistor pairs is similarly reduced. Complementary, in another embodiment of the invention the OTA is of the low-pass type, i.e. also amplifying DC signals. Both OTA's are very compact and the common mode output voltage regulation is in both cases part of the active load structure.

Abstract: A driver circuit can be used to drive a matrix display device, such as a liquid crystal display, that includes a plurality of pixels 16 disposed in rows 12 and columns 14. A first switch 328 has a current path coupled between a high voltage node (e.g., VS) and a group of pixels 16. As an example, the group of pixels 16 can be a row 12 or a column 14. A second switch 326 has a current path coupled between a low voltage node (e.g., ground) the group of pixels 16. A third switch 322 has a current path coupled between an inductive storage element 34 and the group of pixels. The inductive storage element 34 is coupled to an intermediate voltage node (e.g., VS/2) with a voltage between the voltage at the high voltage node and the voltage at the low voltage node.

Abstract: A system for connecting a combination of substrates, including chips, components, printed-circuit-boards and multiple-chip-modules to each other. The system includes a half-conductive layer forming a resistive network sandwiched between the mating substrates. The half-conductive layer has sufficient conductance to allow electrical coupling between mating electrodes on the substrates, and sufficient resistance, to stay below the maximum specified cross-talk level between non-mating electrodes. The connection system can be used to connect light emitting sources with integrated circuits, detectors to integrated circuits and two integrated circuits of the same or possibly different technology to each other. Connection of integrated circuits to printed circuit boards (PCBs) and multi-chip modules (MCMs) is also supported.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: A drive circuit comprises an output terminal for connection to a signal line 1002. An inductor 1012 is coupled between the signal line 1002 and a reference voltage node 1010. A switch 1008 is coupled between the signal line 1002 and the reference voltage node 1010. When the switch 1008 is closed, the inductor 1012 is coupled between the reference voltage node 1010 and the signal line 1002. When the switch is open, the inductor 1012 is not coupled between the reference voltage node 1010 and the signal line 1002.

Abstract: A novel radiation detector, a detection principle and an associated structure are provided for semiconductor substrate detectors in general and for CMOS based circuits in particular. For an optical detector, photons absorbed in the neutral zone of the substrate generate electron hole pairs that migrate by diffusion. A shadow mask gives a spatial modulation to the incident, and consequently, to the absorbed light in the semiconductor substrate. By measuring the magnitude of the spatial frequency component in the minority carrier distribution with a spatial frequency corresponding to that of the shadow mask, a fast detector is conceived. A shadow mask with higher spatial modulation frequency delivers a faster turn-off. The combination of a plurality of these detectors with an image fiber forms a basic system for constructing high-speed parallel optical interconnects between chips.

Abstract: An optoelectronic cell structure includes a plurality of pnpn-devices and circuitry for driving these pnpn-devices. The anodes or the cathodes of said pnpn-devices tied together form a competition node allowing differential charge amplification to take place. The unconnected electrode of each of the pnpn-devices is driven by a pair of complementary transistors. Light input on the pnpn-devices is converted into charge carriers. A forward bias amplifies the difference in charge content in the pnpn-devices by differential competition. A reverse bias turns off each pnpn-device at its own pace, the turn-off times rendering an estimate of the charge content in each pnpn-device present before turn-off. The total system forms a sensitive optical receiver for use in optical interconnects between two or more locations.

Abstract: The invention relates generally to optoelectronic pnpn devices and more particularly to a layer structure suitable for fast electrical complete turn-off of such devices and to a method for efficient and fast operation of such devices and differential pairs of such devices. The devices have four layers and three junctions, and the invention provides for complete depletion of both center layers. The differential pair of pnpn devices also provides a very sensitive optical receiver which combines a very high cycle frequency with a very high optical sensitivity.

Abstract: A differential pair of optoelectronic pnpn devices provided with probing impedances allows such pair to operate as an optical to optical, optical to electrical and electrical to optical transceiver. This basic transceiver is useful in situations where information transport is needed between two or more locations, e.g., optical interconnects in electronic computing systems. The transceiver can be repeated in arrays in connection with Si-VLSI circuitry for high bandwidth optical interconnect applications.