Abstract: Using a e.g. said hardware processor, comparing said estimate of current GNSS quality, for each vehicle in a fleet of interest to the client, to a GNSS quality target value, and, on at least one occasion in which a vehicle in the fleet of interest to the client is found to differ unacceptably from the GNSS quality target value, commanding an actuator to take at least one corrective measure, thereby to yield GNSS quality monitoring functionality.

Abstract: A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes.

Abstract: A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes.

Abstract: A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes.