Patents by Inventor Machiko Sato

Machiko Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE WITH IMPROVED BREAKDOWN VOLTAGE
    Publication number: 20240047572
    Abstract: A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.
    Type: Application
    Filed: October 11, 2023
    Publication date: February 8, 2024
    Inventors: Machiko SATO, Akihiro SHIMOMURA
  • Manafacturing method for power MOSFET semiconductor device with improved breakdown voltage
    Patent number: 11824113
    Abstract: A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.
    Type: Grant
    Filed: September 1, 2022
    Date of Patent: November 21, 2023
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Machiko Sato, Akihiro Shimomura
  • SEMICONDUCTOR DEVICE INCLUDING A POWER MOSFET AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220416079
    Abstract: A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.
    Type: Application
    Filed: September 1, 2022
    Publication date: December 29, 2022
    Inventors: Machiko SATO, Akihiro SHIMOMURA
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20210104625
    Abstract: A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.
    Type: Application
    Filed: August 24, 2020
    Publication date: April 8, 2021
    Inventors: Machiko SATO, Akihiro SHIMOMURA
  • Color image region management system and color image region management method and color image region retrieval method
    Patent number: 5509111
    Abstract: A color image region management system suitable for retrieving a region having a specified color. Color class is determined for each picture element of image data in which the color data of each picture element is expressed by a trichromatic system. In the trichromatic system, it is determined to which color class the color of the picture element belongs of a plurality of color classes divided on the basis of a perceptual color system. There is a color index memory for constructing tree structure data reaching a root node with blocks each including at least one picture element as a leaf node, and calculating, for each node in the tree structure data and for each color class in regards to the picture elements included in the node, the frequency of picture elements having a color belonging to the color class. The calculated frequency of the picture elements is stored as a color index for each color class.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: April 16, 1996
    Assignee: International Business Machines Corporation
    Inventors: Jung-Kook Hong, Machiko Sato, Hiroyasu Takahashi