Patents by Inventor Maciej Cwiklinski

Maciej Cwiklinski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit
    Patent number: 12015062
    Abstract: An integrated circuit is disclosed comprising at least one first field effect transistor, having at least one first source contact and at least one first drain contact and at least one first gate contact, and at least one second field effect transistor, having at least one second source contact and at least one second drain contact and at least one second gate contact, wherein the first drain contact is connected to the second drain contact, and the first source contact is coupled to the second gate contact, wherein the first source contact, the first drain contact, the first gate contact, the second source contact, the second drain contact and the second gate contact are implemented as structured metallization layers on a single substrate, and the first and second drain contacts share at least one single dedicated surface area on said substrate.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: June 18, 2024
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventor: Maciej Cwiklinski
  • INTEGRATED CIRCUIT
    Publication number: 20210126096
    Abstract: An integrated circuit is disclosed comprising at least one first field effect transistor, having at least one first source contact and at least one first drain contact and at least one first gate contact, and at least one second field effect transistor, having at least one second source contact and at least one second drain contact and at least one second gate contact, wherein the first drain contact is connected to the second drain contact, and the first source contact is coupled to the second gate contact, wherein the first source contact, the first drain contact, the first gate contact, the second source contact, the second drain contact and the second gate contact are implemented as structured metallization layers on a single substrate, and the first and second drain contacts share at least one single dedicated surface area on said substrate.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventor: Maciej Cwiklinski