Patents by Inventor Maciej M. Kowalewski

Maciej M. Kowalewski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diffusion barrier for improving the thermal stability of MRAM devices
    Patent number: 7002228
    Abstract: A magnetic random access memory device including a pinned layer having a diffusion barrier, a sense layer, and a tunnel barrier to electrically couple the pinned layer to the sense layer. A method for forming a magnetic random access memory device including forming, on a substrate, a sense layer, forming a tunnel barrier on the sense layer, forming a pinned layer on the tunnel barrier, where the pinned layer includes a diffusion barrier to stop manganese atoms from diffusing to the interface of the tunnel barrier, and annealing the substrate, the sense layer, the tunnel barrier and the pinned layer. The diffusion barrier can include a native oxide having a thickness up to about seven angstroms or an aluminum oxide having a thickness up to about seven angstroms.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: February 21, 2006
    Assignee: Micron Technology, Inc.
    Inventors: James G. Deak, Maciej M. Kowalewski
  • Diffusion barrier for improving the thermal stability of MRAM devices
    Publication number: 20040160810
    Abstract: A magnetic random access memory device including a pinned layer having a diffusion barrier, a sense layer, and a tunnel barrier to electrically couple the pinned layer to the sense layer. A method for forming a magnetic random access memory device including forming, on a substrate, a sense layer, forming a tunnel barrier on the sense layer, forming a pinned layer on the tunnel barrier, where the pinned layer includes a diffusion barrier to stop manganese atoms from diffusing to the interface of the tunnel barrier, and annealing the substrate, the sense layer, the tunnel barrier and the pinned layer. The diffusion barrier can include a native oxide having a thickness up to about seven angstroms or an aluminum oxide having a thickness up to about seven angstroms.
    Type: Application
    Filed: February 18, 2003
    Publication date: August 19, 2004
    Applicant: Micron Technology, Inc.
    Inventors: James G. Deak, Maciej M. Kowalewski