Abstract: A process for the production of thin film transistor with a double gate and an optical mask consisting of depositing a conductive source and drain layer on an insulating substrate (31), producing photosensitive resin patterns fixing the location of the source and drain (34), etching the conductive layer, depositing on the structure obtained an opaque metal layer for forming the lower gate (42), carrying out thermal contraction of the resin patterns, depositing in isotropic manner a preferably a-C:H layer (39), dissolving the resin patterns, depositing a semiconductor layer (44), an insulating layer (45) and then a conductive layer (46) for producing the upper gate of the transistor and photoetching the stack formed by the conductive layer, the semiconducting layer and the insulating layer in order to fix the transistor dimensions and passivate the structure obtained with an electrical insulant (48).

Abstract: Active matrix display screen comprising a matrix of display points and, between these points, addressing lines (Ln) and addressing columns (Cp), each point (Pn,p) being connected by a thin-film transistor (Tn,p) to a line (Ln) and a column (Cp). The screen is characterized by the fact that each point is further connected by a second transistor (Tn+1,p+1) to the next line (Ln+1) and to the next colunn (Cp+1). The effects of column breaks are thus eliminated.

Abstract: Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages:1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon,2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors,3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating,4. deposition of a silica coating by reactive gaseous phase plasma,5. deposition of a conductive coating by reactive gaseous phase plasma,6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating.Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.

Abstract: The present invention relates to a process for making semi-conductor components on an amorphous substrate, comprising two phases, wherein, in a first phase, the substrate is introduced into a deposition chamber and a uniform deposit is made of four successive primary layers on all this substrate, without contact with the outside atmosphere: a first layer of protective insulating material, a second layer of semiconductor material, a third layer of insulating material, of smaller thickness than the first layer, and finally a fourth layer of a metal; and, in a second phase, the substrate coated with these four layers is withdrawn from the deposition chamber and the last three layers are subjected to photoetching and ancillary deposition operations, which are appropriate for the structure of the component to be obtained.