Patents by Inventor Madelon Gertruda Josephina Rovers

Madelon Gertruda Josephina Rovers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of wet etching an inorganic antireflection layer
    Patent number: 7001838
    Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of: patterning the inorganic anti-reflective layer by means of the resist mask, patterning the layer of silicon, removing the resist mask, and removing the inorganic anti-reflective layer by means of etching with an aqueous solution comprising hydrofluoric acid in a low concentration, which aqueous solution is applied at a high temperature.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: February 21, 2006
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Dirk Maarten Knotter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers
  • Method of wet etching a silicon and nitrogen containing material
    Patent number: 6887796
    Abstract: The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: May 3, 2005
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Dirk Maarten Knotter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers
  • Method of wet etching a silicon and nitrogen containing material
    Publication number: 20040121600
    Abstract: The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
    Type: Application
    Filed: October 24, 2003
    Publication date: June 24, 2004
    Inventors: Dirk M Knotter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers
  • Method of wet etching an inorganic antireflection layer
    Publication number: 20040115926
    Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) with a layer of silicon (3) thereon, an inorganic anti-reflective layer (4) applied to the layer of silicon (3), and a resist mask (6) applied to the inorganic anti-reflective layer (4), which method comprises the steps of:
    Type: Application
    Filed: October 24, 2003
    Publication date: June 17, 2004
    Inventors: Dirk Maarten Knottter, Johannes Van Wingerden, Madelon Gertruda Josephina Rovers