Abstract: The present invention describes the development of a novel, tumor epithelial cell and tumor-associated macrophage (TAM)-targeting, blood brain barrier (BBB) crossing glucose-based nanospheres (CSP). More specifically, the present invention discloses a nanoformulation and/or a composition having anticancer activity comprising of carbon nanosphere (CSP) and a sigma receptor targeting ligand (H8) in the ratio of 1:0.08 to 1:0.2, a complex prepared thereof, a process for preparation thereof and a kit for delivery of the drug molecule or the formulation or the composition to tumor site.

Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.

Abstract: A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.

Abstract: Embodiments include frequency offset correction when decoding a packet encoded in a frequency modulated signal. Different symbols encoded in the packet may be corrected by different frequency offsets. In an embodiment, the frequency modulated signal is received on one of the signals of a multi-carrier signal (e.g., based on Orthogonal Frequency Domain Multiplexing, OFDM) and each packet is encoded according to 802.11(a) having the same long sequence repeating multiple times in a header portion. The repetitive sequence is used to compute the different offsets for different symbols.

Abstract: Frequency offset correction when decoding a packet encoded in a frequency modulated signal. Different symbols encoded in the packet may be corrected by different frequency offsets. In an embodiment, the frequency modulated signal is received on one of the signals of a multi-carrier signal (e.g., based on Orthogonal Frequency Domain Multiplexing, OFDM) and each packet is encoded according to 802.11(a) having the same long sequence repeating multiple times in a header portion. The repetitive sequence is used to compute the different offsets for different symbols.