Abstract: A method where WSi.sub.x films are used to contact heavily doped, n.sup.+ regions in a silicon substrate. The doped regions are formed by ion implantation of an impurity such as arsenic (As). The deposited WSi.sub.x film is annealed prior to the deposition of the aluminum interconnect. This anneal is carried out at typical dopant activation conditions. The procedure results in unexpectedly low resistance for small contact areas of less than 1.7 .mu.m.sup.2 when the WSi.sub.x film has a thickness of between 1000 .ANG. and 2500 .ANG..

Abstract: A method of forming a planarized layer on a CCD device to permit a lens array to be formed which includes etching a B.sub.2 O.sub.3 layer provided on a conformally coated SiO.sub.2 layer until a sufficient amount of the deposited B.sub.2 O.sub.3 layer is removed to provide a planarized surface.

Abstract: A conductive self-aligned diffusion barrier is formed by using a self-aligned lift-off process.

Abstract: A process for making a backside illuminated image sensor fabricated upon a thinned silicon layer bonded to a quartz wafer is described. A borosilicate glass (BSG) layer interposed between the thinned silicon device layer and quartz support serves as a doping source for the back-surface accumulating electrostatic potential and serves to minimize stress associated with the thermal expansion differences associated with quartz and silicon.

Abstract: In the method of this invention, lens arrays for light sensitive devices are made which have lenses that are substantially transparent over the wavelength range from 400 nm to 1000 nm comprising the steps of:a) providing a spacer and planarization layer on the device over each sensing element;b) applying a layer of photoresist material;c) patterning and flowing the photoresist material to form a desired lens array on the spacer and planarization layer by applying heat; andd) conformally coating the so formed lenses with a layer of a transparent conductor material.

Abstract: In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates WSi.sub.x (wherein x<2) refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.

Abstract: A method of reducing hillocks in an aluminum layer sputtered onto a substrate includes depositing a layer of WSi.sub.2 on the aluminum layer having a thickness of between 1500-2500 .ANG. and then sintering these bilayers.