Abstract: A junction field effect transistor includes a substrate and a well region on the substrate. A channel region lies in the well region. A source region lies in the channel region. A drain region lies in the channel region and apart from the source region. A gate region is isolated from the source, drain, and channel regions. The gate region is in contact with a portion of the well region.

Abstract: A low-voltage programmable connector includes two separate paths. Each path includes a buffer and a pair of transmission gates whose control terminals receive the voltages supplied by a memory element associated with that path. If the voltages supplied by the memory elements respectively close the transmission gates in the first path and open those in the second path, signal is transferred from the first terminal to the second terminal of the connector. If the voltages supplied by the memory elements respectively open the transmission gates in the first path and close those in the second path, signal is transferred from the second terminal to the first terminal of the connector. If the voltages supplied by the memory elements open the transmission gates in both the first and second paths, signal transfer between the first and second terminals of the connector is inhibited.

Abstract: A programmable connector, in accordance with the present invention, includes a pair of terminals that may be connected to or disconnected from each other via two separate paths. Each path includes a buffer and a switch whose control terminal receives a voltage supplied by a memory element associated with that path. If the voltages supplied by the memory elements respectively close and open the switches disposed in the first and second paths, a signal may only be transferred from the first terminal to the second terminal of the connector. If the voltages supplied by the memory elements respectively open and close the switches disposed in the first and second paths, a signal may only be transferred from the second terminal to the first terminal of the connector. If the voltages supplied by the memory elements open both switches, signal transfer between the first and second terminals of the connector is inhibited.

Abstract: A low-voltage programmable connector includes two separate paths. Each path includes a buffer and a pair of transmission gates whose control terminals receive the voltages supplied by a memory element associated with that path. If the voltages supplied by the memory elements respectively close the transmission gates in the first path and open those in the second path, signal is transferred from the first terminal to the second terminal of the connector. If the voltages supplied by the memory elements respectively open the transmission gates in the first path and close those in the second path, signal is transferred from the second terminal to the first terminal of the connector. If the voltages supplied by the memory elements open the transmission gates in both the first and second paths, signal transfer between the first and second terminals of the connector is inhibited.

Abstract: A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.