Patents by Inventor Madhukar Bhaskara Rao
Madhukar Bhaskara Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10711227Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: GrantFiled: January 9, 2018Date of Patent: July 14, 2020Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Patent number: 10354860Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: GrantFiled: September 30, 2015Date of Patent: July 16, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
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Patent number: 10145008Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.Type: GrantFiled: February 4, 2016Date of Patent: December 4, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Haripin Chandra, Kirk Scott Cuthill, Anupama Mallikarjunan, Xinjian Lei, Matthew R. MacDonald, Manchao Xiao, Madhukar Bhaskara Rao, Jianheng Li
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Publication number: 20180251711Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: ApplicationFiled: January 9, 2018Publication date: September 6, 2018Applicant: Versum Materials US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, JR., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Patent number: 9976111Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: GrantFiled: April 26, 2016Date of Patent: May 22, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Publication number: 20180023192Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.Type: ApplicationFiled: February 4, 2016Publication date: January 25, 2018Inventors: Haripin Chandra, Kirk Scott Cuthill, Anupama Mallikarjunan, Xinjian Lei, Matthew R. MacDonald, Manchao Xiao, Madhukar Bhaskara Rao, Jianheng Li
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Publication number: 20170107460Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.Type: ApplicationFiled: April 26, 2016Publication date: April 20, 2017Applicant: Air Products and Chemicals, Inc.Inventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, JR., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
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Patent number: 9536730Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: GrantFiled: August 27, 2013Date of Patent: January 3, 2017Assignee: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Patent number: 9472420Abstract: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.Type: GrantFiled: November 19, 2014Date of Patent: October 18, 2016Assignee: Air Products and Chemicals, Inc.Inventors: William Jack Casteel, Jr., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Publication number: 20160225616Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: ApplicationFiled: September 30, 2015Publication date: August 4, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
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Publication number: 20160152930Abstract: Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Matthew I. Egbe, Aiping Wu, Madhukar Bhaskara Rao
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Patent number: 9328318Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.Type: GrantFiled: March 3, 2014Date of Patent: May 3, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
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Patent number: 9201308Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: GrantFiled: July 8, 2013Date of Patent: December 1, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20150175943Abstract: Aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing titanium nitride(TiN or TiNxOy) etch residue.Type: ApplicationFiled: November 19, 2014Publication date: June 25, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: William Jack Casteel, JR., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Patent number: 8883701Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.Type: GrantFiled: June 28, 2011Date of Patent: November 11, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
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Patent number: 8765653Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.Type: GrantFiled: June 10, 2010Date of Patent: July 1, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Dnyanesh Chandrakant Tamboli, Madhukar Bhaskara Rao, Gautam Banerjee, Keith Randolph Fabregas
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Publication number: 20140170835Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.Type: ApplicationFiled: March 3, 2014Publication date: June 19, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
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Publication number: 20140109931Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: ApplicationFiled: August 27, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Publication number: 20140100151Abstract: Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition.Type: ApplicationFiled: October 1, 2013Publication date: April 10, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Matthew I. Egbe, Aiping Wu, Madhukar Bhaskara Rao
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Patent number: 8580656Abstract: Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.Type: GrantFiled: July 8, 2009Date of Patent: November 12, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Terence Quintin Collier, Charles A. Lhota, David Barry Rennie, Rajkumar Ramamurthi, Madhukar Bhaskara Rao, Dnyanesh Chandrakant Tamboli