Abstract: A method of assembling a fuel cell stack includes depositing a liquid seal material on an interconnect, pressing a fuel cell into the liquid seal material, and solidifying the liquid seal material after pressing the fuel cell into the liquid seal material. The seal material may also include a support portion or extensions which are configured to reduce an amount of compressive stress on corners of the fuel cell in the fuel cell stack.

Abstract: A fuel cell stack includes stacked solid oxide fuel cells, interconnects disposed between the fuel cells, and dielectric layers disposed on the interconnects and including a first glass-containing component and a corrosion barrier material. Optionally, the dielectric layers may cover only a portion of the interconnect riser seal surfaces which are covered by riser seals. Additionally or alternatively, the fuel cell stack may include an electrolyte reinforcement layer on the electrolyte of the solid oxide fuel cells.

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing also are provided.

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing also are provided.

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.