Patents by Inventor Madhusudan Govindarajan

Madhusudan Govindarajan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11683609
    Abstract: A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: June 20, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Anurup Saha, M Satya Chaitanya Chigatapu, Madhusudan Govindarajan, Ankush Chowdhury
  • Publication number: 20230022036
    Abstract: A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.
    Type: Application
    Filed: January 3, 2022
    Publication date: January 26, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Anurup SAHA, M Satya Chaitanya CHIGATAPU, Madhusudan GOVINDARAJAN, Ankush CHOWDHURY
  • Patent number: 11553145
    Abstract: A method for compensating a Power Supply Rejection Ratio (PSRR) in an image sensor, the method includes receiving, by processing circuitry, at least one analog signal from an active pixels sensor (APS) array, the at least one analog signal including power supply noise, combining, by the processing circuitry, amplified power supply noise with at least one ramp signal to obtain combined power supply noise, and compensating, by the processing circuitry, the PSRR of the APS array by cancelling the power supply noise of the at least one analog signal using the combined power supply noise.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: January 10, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Sandeep Santhosh Kumar, Madhusudan Govindarajan, Pushpita Dutta
  • Patent number: 10951176
    Abstract: A transconductance circuit comprises a first transistor, a second transistor, a first source-degeneration device, a second source-degeneration device, a first feedback device, and a second feedback device. The gate node of the first transistor is coupled to a source node of the second transistor via the first feedback device. The gate node of the second transistor is coupled to a source node of the second transistor via the second feedback device. The source node of the first transistor is coupled to a reference voltage via the first source-degeneration device. The source node of the second transistor is coupled to the reference voltage via the second source-degeneration device.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: March 16, 2021
    Inventors: Anand Mohan Pappu, Ranjit Kumar Guntreddi, Madhusudan Govindarajan, Pranjal Pandey
  • Publication number: 20210051280
    Abstract: A method for compensating a Power Supply Rejection Ratio (PSRR) in an image sensor, the method includes receiving, by processing circuitry, at least one analog signal from an active pixels sensor (APS) array, the at least one analog signal including power supply noise, combining, by the processing circuitry, amplified power supply noise with at least one ramp signal to obtain combined power supply noise, and compensating, by the processing circuitry, the PSRR of the APS array by cancelling the power supply noise of the at least one analog signal using the combined power supply noise.
    Type: Application
    Filed: August 14, 2020
    Publication date: February 18, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sandeep Santhosh KUMAR, Madhusudan GOVINDARAJAN, Pushpita DUTTA
  • Patent number: 10673712
    Abstract: Techniques for executing commands associated with system stacks using parallel workflows are described herein. A dependency representation based at least in part on a stack description is created. The stack description describes stack resource instance and dependencies between those resource instances. The dependency representation is then analyzed to determine sub-workflows each of which may be executed in parallel. The sub-workflows may be altered based on one or more runtime interdependencies and the stack command may be executed by performing the sub-workflows in a determined order.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: June 2, 2020
    Assignee: Amazon Technologies, Inc.
    Inventors: Jaykumar Harish Gosar, Abhijeet Kumar, Madhusudan Govindarajan, Avinash Jaisinghani, Jeffrey Lloyd Baker, Prashant Jayaraman, Pete Peerapong Janes
  • Publication number: 20190341892
    Abstract: A transconductance circuit comprises a first transistor, a second transistor, a first source-degeneration device, a second source-degeneration device, a first feedback device, and a second feedback device. The gate node of the first transistor is coupled to a source node of the second transistor via the first feedback device. The gate node of the second transistor is coupled to a source node of the second transistor via the second feedback device. The source node of the first transistor is coupled to a reference voltage via the first source-degeneration device. The source node of the second transistor is coupled to the reference voltage via the second source-degeneration device.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 7, 2019
    Inventors: Anand Mohan Pappu, Ranjit Kumar Guntreddi, Madhusudan Govindarajan, Pranjal Pandey, Prasenjit Bhowmik