Abstract: Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: Methods for producing wavelength converters are described. The methods include sintering a mixture consisting essentially of first particles and second particles to form a sintered article. In embodiments the first particles consist essentially of particles of ?-SiAlON or precursors thereof, and the second particles consist essentially one or more sintering aids or precursors thereof. In embodiments the sintered article has a density that is greater than or equal to about 90% of a theoretical bulk density of the mixture, and is configured to convert primary light incident thereon to secondary light, wherein the secondary light exhibits a peak with a full width half maximum of greater than 0 to about 60 nanometers (nm) within a wavelength range of about 495 nm to about 600 nm.

Abstract: A quantum dot structure and a method for producing a quantum dot structure are disclosed. In an embodiment the quantum dot structure includes a core comprising a III-V-compound semiconductor material, an intermediate region comprising a III-V-compound semiconductor material at least partially surrounding the core, a shell comprising a III-V-compound semiconductor material at least partially surrounding the core and the intermediate region and a passivation region comprising a II-VI-compound semiconductor material at least partially surrounding the shell.

Abstract: A method for producing a light-emitting semiconductor device and a light-emitting semiconductor device are disclosed. In an embodiment, a method for producing a light-emitting semiconductor device includes providing a growth substrate that is transmissive for visible light; and growing a semiconductor layer sequence on the growth substrate, wherein the semiconductor layer sequence is based on InGaAlP, and wherein the semiconductor layer sequence comprises a multi-quantum well structure configured to absorb blue light or near-ultraviolet radiation and configured to re-emit light in a yellow, orange or red spectral range.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: A method for producing a ceramic converter element is provided. The method includes providing a phosphor as a starting material, mixing the phosphor and at least one metal oxide powder to form a mixture, and processing the mixture to form a ceramic converter material in which the phosphor is embedded in a ceramic matrix. Further, an optoelectronic component with a ceramic converter element and a ceramic converter element are provided.

Abstract: Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Abstract: Techniques for bonding a luminescent material to a thermally conductive substrate using a low temperature glass to provide a wavelength converter system are provided. A dichroic coating is deposited on a thermally conductive substrate. The dichroic coating includes alternating layers of a first material having a first refractive index and a second material having a second refractive index which is greater than the first refractive index. A buffer layer is deposited on the dichroic coating. A wavelength converter is bonded to the buffer layer by a layer of low temperature glass. In some embodiments, the wavelength converter includes a phosphor for converting a primary light from an excitation source into a secondary light.

Abstract: A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0?x?2.

Abstract: Methods for producing wavelength converters are described. The methods include sintering a mixture consisting essentially of first particles and second particles to form a sintered article. In embodiments the first particles consist essentially of particles of ?-SiAlON or precursors thereof, and the second particles consist essentially one or more sintering aids or precursors thereof. In embodiments the sintered article has a density that is greater than or equal to about 90% of a theoretical bulk density of the mixture, and is configured to convert primary light incident thereon to secondary light, wherein the secondary light exhibits a peak with a full width half maximum of greater than 0 to about 60 nanometers (nm) within a wavelength range of about 495 nm to about 600 nm.

Abstract: A composite oxynitride ceramic converter and a light source having the same are disclosed. In an embodiment the composite oxynitride ceramic converter includes a first phase of a triclinic SrSi2O2N2:Eu phosphor and a second phase of a hexagonal Sr3Si6N4O9:Eu phosphor.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0?x?2.

Abstract: A material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0?x?2.

Abstract: A wavelength conversion structure for a light source including a solid-state light-emitting device. The wavelength conversion structure includes one or more apertures formed therein. The apertures may permit color steering of the light downstream of the conversion structure without a substantial reduction in the output of secondary light produced during a conversion process.

Abstract: A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Abstract: A wavelength-conversion plate is described herein. The wavelength conversion plate may include a converter of a first ceramic material and a reflector of a second ceramic material. The first ceramic material converts the primary light emitted by a light source such as a light emitting diode (LED) into a secondary light and the second ceramic material reflects the secondary light emitted by said converter. Preferably, the converter is inlaid into the reflector so that the reflector surrounds an outer edge of the converter. Such a configuration has an advantage of reducing unwanted side emissions from the converter.

Abstract: A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.