Abstract: Aspects of a method and system for configurable Active/Passive Mixer and Shared GM Stage may include configuring an RF mixer in frequency demodulator to operate in an active mode or a passive mode. An in-phase (I) processing path and a quadrature (Q) processing path of the RF mixer may utilize a single shared GM stage. One or more switches may be activated to enable the active mode or the passive mode of operation for the RF mixer.

Abstract: Aspects of a method and system for a shared GM-stage between in-phase and quadrature channels may include processing an in-phase (I) component signal for the I channel and a quadrature (Q) component signal for the Q channel via one or more shared transconductance stages in a frequency demodulator. The I channel may be isolated from the Q channel and the Q channel may be isolated from the I channel using isolation resistors. The values of the isolation resistors may be selected so as to balance the isolation and signal attenuation. A folding circuit, comprising active devices, may isolate the I channel from the Q channel. A generated voltage may be utilized to bias the folding circuit. An oscillator for the I channel may be isolated from a mixer for the Q channel and an oscillator for the Q channel may be isolated from a mixer for the I channel.

Abstract: Aspects of a method and system for a shared GM-stage between in-phase and quadrature channels may include processing an in-phase (I) component signal for the I channel and a quadrature (Q) component signal for the Q channel via one or more shared transconductance stages in a frequency demodulator. The I channel may be isolated from the Q channel and the Q channel may be isolated from the I channel using isolation resistors. The values of the isolation resistors may be selected so as to balance the isolation and signal attenuation. A folding circuit, comprising active devices, may isolate the I channel from the Q channel. A generated voltage may be utilized to bias the folding circuit. An oscillator for the I channel may be isolated from a mixer for the Q channel and an oscillator for the Q channel may be isolated from a mixer for the I channel.

Abstract: Aspects of a method and system for configurable Active/Passive Mixer and Shared GM Stage may include configuring an RF mixer in frequency demodulator to operate in an active mode or a passive mode. An in-phase (I) processing path and a quadrature (Q) processing path of the RF mixer may utilize a single shared GM stage.

Abstract: An integrated circuit includes an RF receiver has a direct-conversion down-converter and demodulator architecture with an integrated low noise amplifier (LNA) for operation in a frequency band of interest (cellular) and provisions for an off-chip LNA for operation in a second (higher) frequency band of interest (such as PCS). A baseband processor includes high-dynamic variable gain amplifiers and 7th-order elliptic low-pass filters. The IC also includes a 4 GHz PLL frequency synthesizer and a three wire series interface to external digital baseband circuits, such as a digital signal processor.

Abstract: An integrated circuit technology combines heterojunction bipolar transistors (HBTs), high electron mobility transistors (HEMTs) and other components along with interconnect metallization on a single substrate. In a preferred embodiment a flat substrate is patterned, using dry etching, to provide one or more mesas in locations which will eventually support HEMTs. A device stack including HEMT and HBT layers is built up over the substrate by molecular beam epitaxy, with the active HEMT devices located on the mesas within openings in the HBT layer. In this way the active HEMT is aligned with the HBT layer to planarize the finished integrated circuit.

Abstract: A submicron emitter heterojunction bipolar transistor and a method for fabricating the same is disclosed. The fabrication process includes lattice matched growth of subcollector, collector, base, emitter, and emitter cap layers in sequential order on a semi-insulating semiconductor substrate. An emitter cap mesa, an emitter/base/collector mesa and a subcollector mesa are formed. Dielectric platforms are formed extending the base/collector layers laterally. Sidewalls are formed on the sides of emitter cap mesa and the sides of the extended base/collector layers and undercuts are etched into the emitter layer and the upper portion of the subcollector layer. This forms an overhang on the emitter cap mesa with respect to the emitter layer and an overhang on the base/collector layers with respect to the upper portion of the subcollector layer.

Abstract: A submicron emitter heterojunction bipolar transistor and a method for fabricating the same is disclosed. The fabrication process includes lattice matched growth of subcollector, collector, base, emitter, and emitter cap layers in sequential order on a semi-insulating semiconductor substrate. An emitter cap mesa, an emitter/base/collector mesa and a subcollector mesa are formed. Dielectric platforms are formed extending the base/collector layers laterally. Sidewalls are formed on the sides of emitter cap mesa and the sides of the extended base/collector layers and undercuts are etched into the emitter layer and the upper portion of the subcollector layer. This forms an overhang on the emitter cap mesa with respect to the emitter layer and an overhang on the base/collector layers with respect to the upper portion of the subcollector layer.

Abstract: A photoresist process combined with wet chemical etching and silicon oxide evaporation and self-aligned lift-off is used to reduce the parasitic (extrinsic) base-collector junction capacitance (C.sub.BC) of InP-based heterojunction bipolar transistors (HBTs). At least a portion of the mesa related to the base contact is etched around the intrinsic device area and then back-filled with evaporated oxide. The base contact pad is then formed over the back-filled oxide, thus reducing the extrinsic device area. This process provides a self-aligned etching of a mesa and deposition and lift-off of the back-fill oxide in one single photoresist processing step. The process is simple and reproducible and provides very high yield. It also eliminates the need for costly and complicated dry-etching techniques.

Abstract: An electrical junction is precisely located between a highly p doped semiconductor material and a more lightly n doped semiconductor material by providing a lightly p doped buffer region between the two materials, with a doping level on the order of the n doped material's. The buffer region is made wide enough to establish an electrical junction at approximately its interface with the n doped material, despite a diffusion of dopant from the p doped material. When applied to a heterojunction bipolar transistor (HBT), the transistor's base serves as the heavily p doped material and its emitter as the more lightly n doped material. The buffer region is preferably employed in conjunction with a graded superlattice, located between the buffer and emitter, which inhibits dopant diffusion from the base into the emitter.

Abstract: A gain-stable npn heterojunction bipolar transistor includes a graded superlattice between its base and emitter consisting of multiple discrete periods, with each period having a layer of base material and another layer of emitter material. The thicknesses of the base material layers decrease while the thicknesses of the emitter material layers increase in discrete steps for each successive period from the base to the emitter. The thickness of each period is preferably at least about 20 Angstroms, with the superlattice including more than five periods. The superlattice is preferably doped to establish an electrical base-emitter junction at a desired location. The graded superlattice inhibits the diffusion of beryllium p dopant from the base into the emitter during transistor operation, thus stabilizing the device's gain and turn-on voltage.