Abstract: A period from a time point when a wafer W is carried into a housing 10 to a time point when the wafer W after being exposed is completely ready to be carried out is set as a single cycle. A time period before a next cycle is begun and after the single cycle is completed is referred to as a standby time period. When an illuminance in dummy light emission is set to be Id; an illuminance in exposure, Is; a time length of the dummy light emission, Td; and a time length of the exposure, Ts, by setting the Id to satisfy an expression of Id=(Tp/Td)·Iw?(Ts/Td)·Is, an average illuminance within the single cycle is maintained constant between substrates.

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Abstract: A period from a time point when a wafer W is carried into a housing 10 to a time point when the wafer W after being exposed is completely ready to be carried out is set as a single cycle. A time period before a next cycle is begun and after the single cycle is completed is referred to as a standby time period. When an illuminance in dummy light emission is set to be Id; an illuminance in exposure, Is; a time length of the dummy light emission, Td; and a time length of the exposure, Ts, by setting the Id to satisfy an expression of Id=(Tp/Td)·Iw?(Ts/Td)·Is, an average illuminance within the single cycle is maintained constant between substrates.

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Abstract: A film formation apparatus for forming a self-assembled monomolecular film on a film formation surface of a substrate includes: a chamber for accommodating the substrate, the chamber including a facing inner wall surface facing the film formation surface of the substrate, the facing inner wall surface being a ground potential surface; a source gas supply part for supplying a source gas for the self-assembled monomolecular film into the chamber; and an electrode positioned between the film formation surface of the substrate accommodated in the chamber and the facing inner wall surface of the chamber, and configured to form an electric field in a direction extending from the film formation surface of the substrate accommodated in the chamber toward the facing inner wall surface of the chamber or in a direction extending from the facing inner wall surface of the chamber toward the film formation surface of the substrate.