Abstract: A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide &agr;-ray shielding of the semiconductor device.

Abstract: A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device.

Abstract: A composite metal polybasic salt containing a trivalent metal and magnesium as metal components and having a novel crystal structure, and a method of preparing the same. The invention further deals with a composite metal polybasic salt which has anion-exchanging property, which by itself is useful as an anion-exchanger, capable of introducing anions suited for the use upon anion-exchange, and finds a wide range of applications, and a method of preparing the same. The composite metal polybasic salt has a particular chemical composition and X-ray diffraction peaks, and further has a degree of orientation (Io) of not smaller than 1.5.

Abstract: An oiliness agent comprising a carboxylate of a composite metal hydroxide having a chemical composition represented by the following general formula (1), M2aM3x(OH)y(A)z.nH2O  (1) wherein, M2 indicates a divalent metal, M3 indicates a trivalent metal, A indicates an anion of an aliphatic carboxylic acid, a, x, y, and z are numbers satisfying the following formulas: a>0, 3x+2a−y−mz=0 (wherein m is a valency of anion A), 0.3≦a/x≦2.5 1.5≦y/(a+x)≦3.0 1.0≦(a+x)/z≦20.0, and n is a number not larger than 7. The oiliness agent exhibits excellent emulsifying properties such as dispersion stability and moisture retaining property without emitting odor and without a tendency of being colored, and is very useful for forming a water-in-oil emulsion which can be effectively used as a base material for cosmetics.

Abstract: A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.

Abstract: An oiliness agent comprising a carboxylate of a composite metal hydroxide having a chemical composition represented by the following general formula (1),

Abstract: The object of the present invention is to realize a semiconductor device enabling a flip chip connection without use of underfill.