Abstract: A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.

Abstract: There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

Abstract: There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

Abstract: A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.

Abstract: There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

Abstract: Disclosed are a positive active material for a rechargeable lithium battery, a method of manufacturing the same, and a rechargeable lithium battery including the same. More specifically, the positive active material for a rechargeable lithium battery is a compound having an orthorhombic layered structure represented by the following Chemical Formula 1 or a compound represented by the following Chemical Formula 2, a method for producing the same, and a rechargeable lithium battery including the same. Li1+xMyO2+z??[Chemical Formula 1] {m(Li1+xMyO2+z)}.{1-m(LiMO2)}??[Chemical Formula 2] Wherein, in the above Chemical Formula 1 or Chemical Formula 2, M is one or more elements selected from the group consisting of Mn, Co, Ni, Al, Ti, Mo, V, Cr, Fe, Cu, Zr, Nb, and Ga, 0.7?x?1.2, 0.8?y?1.2, ?0.2?z?0.2, and 0<m?1.

Abstract: Provided are a sequential joint behavior sheet using photo deformation and a method of controlling folding and unfolding thereof. The sequential joint behavior sheet includes at least three rigid parts, a first joint part joining two of the rigid parts that are adjacent to each other, and a second joint part joining two of the rigid parts that are adjacent to each other and spaced apart from the first joint part.

Abstract: Disclosed are a positive active material for a rechargeable lithium battery, a method of manufacturing the same, and a rechargeable lithium battery including the same. More specifically, the positive active material for a rechargeable lithium battery is a compound having an orthorhombic layered structure represented by the following Chemical Formula 1 or a compound represented by the following Chemical Formula 2, a method for producing the same, and a rechargeable lithium battery including the same. Li1+xMyO2+z??[Chemical Formula 1] {m(Li1+xMyO2+z)}.{1-m(LiMO2)}??[Chemical Formula 2] Wherein, in the above Chemical Formula 1 or Chemical Formula 2, M is one or more elements selected from the group consisting of Mn, Co, Ni, Al, Ti, Mo, V, Cr, Fe, Cu, Zr, Nb, and Ga, 0.7?x?1.2, 0.8?y?1.2, ?0.2?z?0.2, and 0<m?1.

Abstract: Disclosed herein is a deformation sensing flexible substrate using a pattern formed of a conductive material. The deformation sensing flexible substrate, using the pattern formed of the conductive material, includes a flexible substrate; and conductive patterns in which conductors including a conductive material are arranged and formed to be contactable and non-contact to each other based on deformation of the flexible substrate.

Abstract: Disclosed herein is a deformation sensing flexible substrate using a pattern formed of a conductive material. The deformation sensing flexible substrate, using the pattern formed of the conductive material, includes a flexible substrate; and conductive patterns in which conductors including a conductive material are arranged and formed to be contactable and non-contact to each other based on deformation of the flexible substrate.

Abstract: Provided are a sequential joint behavior sheet using photo deformation and a method of controlling folding and unfolding thereof. The sequential joint behavior sheet includes at least three rigid parts, a first joint part joining two of the rigid parts that are adjacent to each other, and a second joint part joining two of the rigid parts that are adjacent to each other and spaced apart from the first joint part.