Abstract: A method for handling containers (I) of collapsible type in a filling machine (20) comprising consecutively arranged stations (S1, S2, S3, S4, S5, S6) comprising a filling station (S3) and a gas filling station (S5), the method comprising intermittently moving the containers (I) to the consecutively arranged stations (S1, S2, S3, S4, S5, S6), supplying, at the filling station (S3), liquid product into the product compartment (5) and supplying, at the gas filling station (S5), gas into the handle compartment (7). The filling station (S3) and the gas filling station (S5) are operated such that liquid product is supplied to the product compartment (5) of one of the containers (I) while gas is supplied to the handle compartment (7) of another of the containers (I).

Abstract: An apparatus for filling a pouch type package with a liquid product, comprising a plurality of stations arranged to consecutively receive and handle the pouch type package, the plurality of stations comprising a filling station for filling the product compartment with the liquid product, a sealing station for sealing the product compartment and comprising a first sealing member arranged to provide the pouch type package with a first seal closing the filling duct, a gas filling station arranged to introduce gas into the handle compartment, and a transfer unit comprising a gripping member for retrieving the package from the gas filling station and transferring it to a neighboring down-stream situated station. A gas sealing unit (36) integrated in the gripping member of the transfer unit, the gas sealing unit (36) comprising a second sealing member (37) arranged to provide the pouch type package with a second seal entrapping gas introduced into the handle compartment.

Abstract: A method for handling containers (I) of collapsible type in a filling machine (20) comprising consecutively arranged stations (S1, S2, S3, S4, S5, S6) comprising a filling station (S3) and a gas filling station (S5), the method comprising intermittently moving the containers (I) to the consecutively arranged stations (S1, S2, S3, S4, S5, S6), supplying, at the filling station (S3), liquid product into the product compartment (5) and supplying, at the gas filling station (S5), gas into the handle compartment (7). The filling station (S3) and the gas filling station (S5) are operated such that liquid product is supplied to the product compartment (5) of one of the containers (I) while gas is supplied to the handle compartment (7) of another of the containers (I).

Abstract: An apparatus for filling a pouch type package with a liquid product, comprising a plurality of stations arranged to consecutively receive and handle the pouch type package, the plurality of stations comprising a filling station for filling the product compartment with the liquid product, a sealing station for sealing the product compartment and comprising a first sealing member arranged to provide the pouch type package with a first seal closing the filling duct, a gas filling station arranged to introduce gas into the handle compartment, and a transfer unit comprising a gripping member for retrieving the package from the gas filling station and transferring it to a neighboring down-stream situated station. A gas sealing unit (36) integrated in the gripping member of the transfer unit, the gas sealing unit (36) comprising a second sealing member (37) arranged to provide the pouch type package with a second seal entrapping gas introduced into the handle compartment.

Abstract: In accordance with the present inventive concept, there is provided a method for sealing a flexible package of collapsible type. The method comprises providing a first seal extending transverse a filling channel of the flexible package and providing a second seal extending transverse a filling channel of the flexible package. Said second seal overlaps said first seal such that a combined seal is provided comprising a top portion formed solely by a first sealing unit, an intermediate portion formed by the first and a second sealing unit, and a bottom portion formed solely by the second sealing unit.

Abstract: The present invention relates to an apparatus and a method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures on semiconductor substrates in real-time during epitaxial growth. The method includes either assigning a pre-calculated 3D-model from a data base to the sample or calculating a 3D-model of the sample using the measured optical reflectances of the plurality of different measuring positions of the sample, where calculation or pre-calculation of the 3D-model includes calculation of the interference effects of light reflected from the front and back interfaces of the nano-structure and calculation of the interference effects due to superposition of neighbouring wave-fronts reflected from the nano-structure area and wave-fronts reflected from the substrate area between the nano-structures.

Abstract: The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap).

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface.

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.