Patents by Inventor Maguy Abi Jaoude
Maguy Abi Jaoude has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12247942Abstract: A glucose sensor includes an insulating metal oxide layer and at least one pair of metallic electrodes arranged on the insulating metal oxide layer and separated by a gap containing the metal oxide layer. In operation, a probe including a voltage supply and current sensor can provide a voltage difference across the first and second metallic electrodes while a sample is present across the gap between the electrodes. A measured current between the first and second metallic electrodes when the voltage difference is provided can be correlated to a glucose level of the sample.Type: GrantFiled: June 3, 2019Date of Patent: March 11, 2025Assignee: Khalifa University of Science and TechnologyInventors: Heba Abunahla, Baker Mohammad, Anas Alazzam, Maguy Abi Jaoude, Mahmoud Al-Qutayri
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Patent number: 12216026Abstract: Techniques for measuring vacuum pressure using a memristor element are described. A vacuum sensor can include a memristor element having a semiconductor substrate, a memristive material layer, and a conductive electrode. The off-state resistance of the memristor element can be sensitive to changes in ambient pressure at the element. The off-state resistance of the memristor element may also exhibit a well-defined increase at pressures below a threshold pressure. Measurement of the off-state resistance may be obtained with low power consumption and without changing the resistance or switching the state of the memristor element. The measurements may be used to both determine a leak rate of the ambient pressure within the volume of interest and determine if the sensor is exposed to vacuum pressure below the threshold pressure.Type: GrantFiled: June 14, 2022Date of Patent: February 4, 2025Assignee: Khalifa University of Science and TechnologyInventors: Baker Mohammad, Khaled Muneer Mutlaq Humood, Maguy Abi Jaoude, Sueda Saylan
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Publication number: 20220412836Abstract: Techniques for measuring vacuum pressure using a memristor element are described. A vacuum sensor can include a memristor element having a semiconductor substrate, a memristive material layer, and a conductive electrode. The off-state resistance of the memristor element can be sensitive to changes in ambient pressure at the element. The off-state resistance of the memristor element may also exhibit a well-defined increase at pressures below a threshold pressure. Measurement of the off-state resistance may be obtained with low power consumption and without changing the resistance or switching the state of the memristor element. The measurements may be used to both determine a leak rate of the ambient pressure within the volume of interest and determine if the sensor is exposed to vacuum pressure below the threshold pressure.Type: ApplicationFiled: June 14, 2022Publication date: December 29, 2022Inventors: Baker MOHAMMAD, Khaled Muneer Mutlaq HUMOOD, Maguy ABI JAOUDE, Sueda SAYLAN
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Patent number: 11480695Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 ?m thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.Type: GrantFiled: July 15, 2021Date of Patent: October 25, 2022Assignee: Khalifa University of Science and TechnologyInventors: Baker Mohammad, Maguy Abi Jaoude, Heba Abunahla, Mahmoud Al-Qutayri, Curtis O'Kelly
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Publication number: 20210341634Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 ?m thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.Type: ApplicationFiled: July 15, 2021Publication date: November 4, 2021Inventors: Baker Mohammad, Maguy Abi Jaoude, Heba Abunahla, Mahmoud Al-Qutayri, Curtis O'Kelly
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Patent number: 11105937Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 ?m thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.Type: GrantFiled: December 30, 2016Date of Patent: August 31, 2021Assignee: Khalifa University of Science and TechnologyInventors: Baker Mohammad, Maguy Abi Jaoude, Heba Abunahla, Mahmoud Al-Qutayri, Curtis O'Kelly
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Publication number: 20210116410Abstract: A glucose sensor includes an insulating metal oxide layer and at least one pair of metallic electrodes arranged on the insulating metal oxide layer and separated by a gap containing the metal oxide layer. In operation, a probe including a voltage supply and current sensor can provide a voltage difference across the first and second metallic electrodes while a sample is present across the gap between the electrodes. A measured current between the first and second metallic electrodes when the voltage difference is provided can be correlated to a glucose level of the sample.Type: ApplicationFiled: June 3, 2019Publication date: April 22, 2021Inventors: Heba ABUNAHLA, Baker MOHAMMAD, Anas ALAZZAM, Maguy Abi JAOUDE, Mahmoud AL-QUTAYRI
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Publication number: 20200284924Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 ?m thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.Type: ApplicationFiled: December 30, 2016Publication date: September 10, 2020Inventors: Baker Mohammad, Maguy Abi Jaoude, Heba Abu Hahla, Mahmoud Al-Qutayri, Curtis O'Kelly