Patents by Inventor Mahbub D. Satter

Mahbub D. Satter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial base layers for heterojunction bipolar transistors
    Patent number: 8809912
    Abstract: An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the emitter and collector. The base can comprise a plurality of alternating type-I and type-II layers arranged to form a short period super lattice. The type-I layers can have a band-gap that is narrower than the band-gap of the type-II layers. At least one of the type-I layers and the type-II layers can consist essentially of a quaternary material.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: August 19, 2014
    Assignee: Georgia Tech Research Corporation
    Inventors: Paul Douglas Yoder, Munmun Islam, Mahbub D. Satter
  • Epitaxial Base Layers For Heterojunction Bipolar Transistors
    Publication number: 20130320403
    Abstract: An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the emitter and collector. The base can comprise a plurality of alternating type-I and type-II layers arranged to form a short period super lattice. The type-I layers can have a band-gap that is narrower than the band-gap of the type-II layers. At least one of the type-I layers and the type-II layers can consist essentially of a quaternary material.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 5, 2013
    Applicant: GEORGIA TECH RESEARCH CORPORATION
    Inventors: Paul Douglas Yoder, Munmun Islam, Mahbub D. Satter