Publication number: 20240347617
Abstract: A structure includes a p-doped thin layer and an oxide high-k gate dielectric layer doped with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25, wherein the thin layer has a thickness of 10 nm or less, and another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.2. A method for p-doping a thin layer includes doping an oxide high-k gate dielectric layer with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25 to thereby p-dope the thin layer by surface charge transfer doping, wherein the thin layer has a thickness of 10 nm or less.
Type:
Application
Filed:
August 10, 2023
Publication date:
October 17, 2024
Applicant:
SAMSUNG ELECTRONICS CO., LTD.
Inventors:
Nikhil Sivadas, Yongwoo Shin, Mahdi Amachraa
Publication number: 20240097184
Abstract: A lithium garnet material has the formula Li7-?La3Z2z-x-y-zM1xM2yM3zO12, where M1 is one or a combination of (Y, In, Mg, Ca, Ba, Sc, Sr, Ru) with oxidation number (valence) lower than 4+, M2 is one or a combination of (Bi, Ta, Nb, Mo, Sb, Te) with oxidation number (valence) higher than 4+, and M3 is one or a combination of (Hf, Ti, Sn, Si) with oxidation number (valence) equal to 4+, subject to 0<x?1, 0?y?1, 0?z?2, 0<x+y+z?2, and ?0.2<?<0.2. Also provided is a lithium garnet material which is the same as the aforementioned lithium garnet material except that M1 is one or a combination of (Y, In, Mg, Ca, Ba, Sr, Ru) and M2 is one or a combination of (Bi, Ta, Nb, Mo, Sb, Te, W). Lithium oxide solid-state electrolyte materials have the same formula as the aforementioned lithium garnet materials but also include Ge for M3.
Type:
Application
Filed:
February 23, 2023
Publication date:
March 21, 2024
Applicant:
SAMSUNG ELECTRONICS CO., LTD.
Inventors:
Samuel CROSS, Yan WANG, Mahdi AMACHRAA