Patents by Inventor Mahdi AMACHRAA

Mahdi AMACHRAA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347617
    Abstract: A structure includes a p-doped thin layer and an oxide high-k gate dielectric layer doped with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25, wherein the thin layer has a thickness of 10 nm or less, and another structure includes a p-doped transition metal dichalcogenide layer with a binary oxide high-k gate dielectric layer doped with V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.2. A method for p-doping a thin layer includes doping an oxide high-k gate dielectric layer with Cd, As, Cr, Pd, Sc, V, Sn, Mo, Mn, Ti, Ge, Ag, Ni, In, or Ga within a fractional (x) limit 0<x<0.25 to thereby p-dope the thin layer by surface charge transfer doping, wherein the thin layer has a thickness of 10 nm or less.
    Type: Application
    Filed: August 10, 2023
    Publication date: October 17, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nikhil Sivadas, Yongwoo Shin, Mahdi Amachraa
  • Publication number: 20240145766
    Abstract: A lithium garnet material has the formula Li7-wLa3-x(Ax1Bx2Cx3)Zr2-y(Cy1Dy2Ey3)O12, where ?0.2?w?0.2, A is one or a combination of Na+ and K+, B is one or a combination of two or more of Mg2+, Ca2+, Sr2+, and Ba2+, and C is one or a combination of two or more of Y3+, Sc3+, and Ce3+ on the La3+ site, and D is one or a combination of two or more of Si4+, Sn4+, Ti4+, and Ce4+ and E is one or a combination of two or more of Sb5+, Bi5+, Ta5+, and Nb5+ on the Zr4+ site, 0<x<2, 0<y<2, and x1+x2+x3=x and y1+y2+y3=y either satisfy a charge balance mechanism with their respective doping site or satisfy any combination that maintains the charge neutrality of the material.
    Type: Application
    Filed: February 23, 2023
    Publication date: May 2, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Mahdi AMACHRAA, Samuel Cross, Yan Wang
  • Publication number: 20240097184
    Abstract: A lithium garnet material has the formula Li7-?La3Z2z-x-y-zM1xM2yM3zO12, where M1 is one or a combination of (Y, In, Mg, Ca, Ba, Sc, Sr, Ru) with oxidation number (valence) lower than 4+, M2 is one or a combination of (Bi, Ta, Nb, Mo, Sb, Te) with oxidation number (valence) higher than 4+, and M3 is one or a combination of (Hf, Ti, Sn, Si) with oxidation number (valence) equal to 4+, subject to 0<x?1, 0?y?1, 0?z?2, 0<x+y+z?2, and ?0.2<?<0.2. Also provided is a lithium garnet material which is the same as the aforementioned lithium garnet material except that M1 is one or a combination of (Y, In, Mg, Ca, Ba, Sr, Ru) and M2 is one or a combination of (Bi, Ta, Nb, Mo, Sb, Te, W). Lithium oxide solid-state electrolyte materials have the same formula as the aforementioned lithium garnet materials but also include Ge for M3.
    Type: Application
    Filed: February 23, 2023
    Publication date: March 21, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Samuel CROSS, Yan WANG, Mahdi AMACHRAA
  • Publication number: 20230420729
    Abstract: A compound represented by Formula 1: Li4+dH+hSr2?xM1a+xZr1?yM2b+yO6?zXc?z, wherein in Formula 1, M1 is a cationic dopant in Sr site with a valance of a+; a is 1, 2 or 3; M2 is a cationic dopant in Zr site with a valance of b+; b is 2, 3, 4 or 5; X is an anion dopant in O site with a valence of c?; c is 1, 2, or 3; 0?h?2, 0?x?2, 0?y?1, 0?z?0.5, x+y+z+h?0, d=(2?a)*x+(4?b)*y?(2?c)*z?h, and d?0.
    Type: Application
    Filed: January 3, 2023
    Publication date: December 28, 2023
    Inventors: Gabin YOON, Yan WANG, Samuel CROSS, Mahdi AMACHRAA, Hyeokjo GWON, Doh Won JUNG