Patents by Inventor Mahdi Jamali
Mahdi Jamali has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11380381Abstract: A memory device may include a digit line, a ferroelectric memory cell coupled with the digit line, a first capacitor including a first node and a second node, the first node coupled with the digit line using a first path and the second node coupled with the digit line using a second path different from the first path, and a switching component positioned in the second path and coupled with the second node of the first capacitor and the digit line, the switching component configured to selectively couple the second node of the first capacitor with the digit line. In some cases, the memory device may further include a second capacitor coupled with the digit line and the second node of the first capacitor.Type: GrantFiled: December 1, 2020Date of Patent: July 5, 2022Assignee: Micron Technology, Inc.Inventors: Yasuko Hattori, Mahdi Jamali
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Publication number: 20210151090Abstract: Methods, systems, and devices for canceling memory cell variations are described. A memory device may include a digit line, a ferroelectric memory cell coupled with the digit line, a first capacitor including a first node and a second node, the first node coupled with the digit line using a first path and the second node coupled with the digit line using a second path different from the first path, and a switching component positioned in the second path and coupled with the second node of the first capacitor and the digit line, the switching component configured to selectively couple the second node of the first capacitor with the digit line. In some cases, the memory device may further include a second capacitor coupled with the digit line and the second node of the first capacitor.Type: ApplicationFiled: December 1, 2020Publication date: May 20, 2021Inventors: Yasuko Hattori, Mahdi Jamali
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Patent number: 10930324Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: GrantFiled: May 18, 2020Date of Patent: February 23, 2021Assignee: Micron Technology, Inc.Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Patent number: 10878874Abstract: A memory device may include a digit line, a ferroelectric memory cell coupled with the digit line, a first capacitor including a first node and a second node, the first node coupled with the digit line using a first path and the second node coupled with the digit line using a second path different from the first path, and a switching component positioned in the second path and coupled with the second node of the first capacitor and the digit line, the switching component configured to selectively couple the second node of the first capacitor with the digit line. In some cases, the memory device may further include a second capacitor coupled with the digit line and the second node of the first capacitor.Type: GrantFiled: May 22, 2019Date of Patent: December 29, 2020Assignee: Micron Technology, Inc.Inventors: Yasuko Hattori, Mahdi Jamali
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Patent number: 10878985Abstract: A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.Type: GrantFiled: December 8, 2017Date of Patent: December 29, 2020Assignee: Regents of the University of MinnesotaInventors: Jian-Ping Wang, Mahendra DC, Mahdi Jamali, Andre Mkhoyan, Danielle Hickey
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Publication number: 20200279590Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: ApplicationFiled: May 18, 2020Publication date: September 3, 2020Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Patent number: 10692547Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: GrantFiled: January 17, 2020Date of Patent: June 23, 2020Assignee: Micron Technology, Inc.Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Publication number: 20200152243Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: ApplicationFiled: January 17, 2020Publication date: May 14, 2020Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Patent number: 10573355Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: GrantFiled: July 16, 2019Date of Patent: February 25, 2020Assignee: Micron Technology, Inc.Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Publication number: 20200013437Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: ApplicationFiled: July 16, 2019Publication date: January 9, 2020Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Patent number: 10529775Abstract: This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.Type: GrantFiled: April 4, 2019Date of Patent: January 7, 2020Assignee: Regents of the University of MinnesotaInventors: Jian-Ping Wang, Yang Lv, Mahdi Jamali
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Publication number: 20190341094Abstract: Methods, systems, and devices for canceling memory cell variations are described. A memory device may include a digit line, a ferroelectric memory cell coupled with the digit line, a first capacitor including a first node and a second node, the first node coupled with the digit line using a first path and the second node coupled with the digit line using a second path different from the first path, and a switching component positioned in the second path and coupled with the second node of the first capacitor and the digit line, the switching component configured to selectively couple the second node of the first capacitor with the digit line. In some cases, the memory device may further include a second capacitor coupled with the digit line and the second node of the first capacitor.Type: ApplicationFiled: May 22, 2019Publication date: November 7, 2019Inventors: Yasuko Hattori, Mahdi Jamali
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Patent number: 10395697Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: GrantFiled: February 8, 2018Date of Patent: August 27, 2019Assignee: Micron Technology, Inc.Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Patent number: 10388353Abstract: A memory device may include a digit line, a ferroelectric memory cell coupled with the digit line, a first capacitor including a first node and a second node, the first node coupled with the digit line using a first path and the second node coupled with the digit line using a second path different from the first path, and a switching component positioned in the second path and coupled with the second node of the first capacitor and the digit line. The switching component may selectively couple the second node of the first capacitor with the digit line. In some cases, the memory device may also include a second capacitor coupled with the digit line and the second node of the first capacitor.Type: GrantFiled: March 16, 2018Date of Patent: August 20, 2019Assignee: Micron Technology, Inc.Inventors: Yasuko Hattori, Mahdi Jamali
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Publication number: 20190244641Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.Type: ApplicationFiled: February 8, 2018Publication date: August 8, 2019Inventors: Mahdi Jamali, William A. Melton, Daniele Vimercati, Xinwei Guo, Yasuko Hattori
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Publication number: 20190237510Abstract: This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.Type: ApplicationFiled: April 4, 2019Publication date: August 1, 2019Inventors: Jian-Ping Wang, Yang Lv, Mahdi Jamali
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Patent number: 10302711Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.Type: GrantFiled: March 12, 2018Date of Patent: May 28, 2019Assignee: Regents of the University of MinnesotaInventors: Jian-Ping Wang, Angeline Klemm Smith, Mahdi Jamali, Zhengyang Zhao
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Patent number: 10283561Abstract: This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.Type: GrantFiled: December 12, 2017Date of Patent: May 7, 2019Assignee: Regents of the University of MinnesotaInventors: Jian-Ping Wang, Yang Lv, Mahdi Jamali
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Patent number: 10217522Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.Type: GrantFiled: May 22, 2017Date of Patent: February 26, 2019Assignee: Regents of the University of MinnesotaInventors: Jian-Ping Wang, Mahdi Jamali, Sachin S. Sapatnekar, Meghna G. Mankalale, Zhaoxin Liang, Angeline Klemm Smith, Mahendra DC, Hyung-il Kim, Zhengyang Zhao
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Publication number: 20180203077Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Inventors: Jian-Ping Wang, Angeline Klemm Smith, Mahdi Jamali, Zhengyang Zhao