Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: A pellicle having a metal oxysilicide layer. A pellicle having a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. A method of manufacturing a pellicle for a lithographic apparatus, the method including providing a metal oxysilicide layer. A lithographic assembly including a pellicle having a metal oxysilicide layer. The use of a pellicle having a metal oxysilicide layer in a lithographic apparatus.

Abstract: A lithographic apparatus substrate table comprises a plurality of first projections, whereby the first projections define a first substrate supporting plane and a plurality of second projections, whereby the second projections define a second substrate supporting plane. The substrate table further comprises a clamping device configured to exert a clamping force onto the substrate. The second substrate supporting plane is parallel to the first substrate supporting plane. The second substrate supporting plane is offset in respect of the first substrate supporting plane in a direction perpendicular to the first and second substrate supporting planes. The lithographic apparatus substrate table is configured to support the substrate on the second projections at the second substrate supporting plane before application of the clamping force by the clamping device.

Abstract: A lithographic apparatus substrate table comprises a plurality of first projections, whereby the first projections define a first substrate supporting plane and a plurality of second projections, whereby the second projections define a second substrate supporting plane. The substrate table further comprises a clamping device configured to exert a clamping force onto the substrate. The second substrate supporting plane is parallel to the first substrate supporting plane. The second substrate supporting plane is offset in respect of the first substrate supporting plane in a direction perpendicular to the first and second substrate supporting planes. The lithographic apparatus substrate table is configured to support the substrate on the second projections at the second substrate supporting plane before application of the clamping force by the clamping device.