Abstract: In embodiments of the present disclosure, logic devices include magnetically coupled and electrically isolated perpendicular magnetic anisotropy (PMA) ferromagnet (FM) material layers. The logic devices may be read based on the anomalous Hall effect (AHE).

Abstract: In embodiments of the present disclosure, logic devices include a magnetoelectric (ME) material layer, an in-plane magnetic anisotropy (IMA) ferromagnetic (FM) material layer on the ME material layer, a dielectric layer on the IMA FM material layer, a metal layer on the dielectric layer, and a perpendicular magnetic anisotropy (PMA) FM material layer on the metal layer. The logic devices may be read based on the anomalous Hall effect (AHE) based on exchange coupling between the FM material layers.

Abstract: Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer including a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; a fourth layer over the third layer(s), where the fourth layer includes a superlattice with a heavy metal and a dielectric material; and a fifth layer over the fourth layer, where the fifth layer includes a material having low spin-orbit coupling.

Abstract: Multi-layer magnetoelectric, ferroelectric, and ferromagnetic structures comprising one or more soft layers and one or more hard layers have a lower coercive voltage than magnetoelectric, ferroelectric, and ferromagnetic structures comprising a single layer. The lower coercive voltage of the overall multi-layer structure is due to exchange coupling between the soft and hard layers. The soft layer has a coercive voltage that is lower than the coercive voltage of the hard layer and magnetic exchange coupling between the soft and hard layers during switching makes it easier for the hard layer to switch polarization or magnetization states. The multi-layer magnetoelectric, ferroelectric, and ferromagnetic structures can be used in a variety of spintronic devices, such as capacitors, magnetoelectric spin-orbit (MESO) devices, magnetoelectric magnetic tunneling junctions (MEMTJs), and ferroelectric field effect transistors (FeFETs).

Abstract: Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer that includes a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; and a fourth layer over the third layer(s), wherein the fourth layer includes platinum, cobalt, and oxygen.

Abstract: An apparatus comprising a first electrical oscillator, a second electrical oscillator, at least one ferroelectric capacitor coupled between the first electrical oscillator and the second electrical oscillator, a ferroelectric capacitor of the at least one ferroelectric capacitor comprising a first terminal, a second terminal, and a ferroelectric material between the first terminal and the second terminal; and a detector coupled to the first electrical oscillator and second electrical oscillator, the detector to produce an output based on a state of the first electrical oscillator and the second electrical oscillator.

Abstract: Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer that includes a magnetoelectric material; one or more second layers over the first layer, where the second layer(s) include one or more ferromagnetic materials; a third layer over the second layer(s), where the third layer includes an antiferromagnetic material; and a fourth layer over the third layer, where the fourth layer includes at least one of a metal, a topological insulator, or a two-dimensional (2D) semiconductor material.

Abstract: Apparatus and methods for true random number generation (RNG) with a target probability distribution with autonomously learning probabilistic circuits. The apparatus utilizes, for individual probabilistic bits (p-bits), a magnetic tunnel junction (MTJ) resistor. The apparatus also uses circuitry to harness the fluctuating resistance of the MTJ resistor to generate high-quality random numbers. The hardware footprint depends on the precision required and is smaller than an equally precise or high-quality RNG implemented using CMOS hardware. Post-processing is not required on the generated random numbers.

Abstract: Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.

Abstract: A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.

Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.

Abstract: An apparatus includes a substrate and a plurality of biological material stimulators positioned on the substrate. Each biological material stimulator forms a fluctuating magnetic field capable of inducing a current in biological material.

Abstract: A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.

Abstract: In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.

Abstract: An apparatus includes a substrate and a plurality of biological material stimulators positioned on the substrate. Each biological material stimulator forms a fluctuating magnetic field capable of inducing a current in biological material.