Patents by Inventor Maher Bishara Tahhan

Maher Bishara Tahhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM
    Publication number: 20240072130
    Abstract: A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having angled sidewalls in the opening of the dielectric layer; a mini field plate having angled sidewalls on the gate; and a gate top on the mini field plate, wherein the gate, the mini field plate, and the gate top form a “T” shape.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Applicant: Raytheon Company
    Inventors: Matthew Thomas Dejarld, Eduardo M. Chumbes, Maher Bishara Tahhan, David Patrick Hunley
  • RARE-EARTH III-NITRIDE N-POLAR HEMT
    Publication number: 20220262937
    Abstract: A high electron mobility transistor (HEMT) heterostructure includes a substrate; a N-polar channel layer; and a N-polar barrier layer positioned between the substrate and the channel layer, wherein the barrier layer comprises a rare-earth III-nitride material. The rare earth III-nitride material can be ScAlN.
    Type: Application
    Filed: February 8, 2022
    Publication date: August 18, 2022
    Applicant: Raytheon Company
    Inventors: John Andrew Logan, Brian Douglas Schultz, Maher Bishara Tahhan