Patents by Inventor Mahesh G. Samant
Mahesh G. Samant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11665979Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.Type: GrantFiled: April 3, 2020Date of Patent: May 30, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Mahesh G. Samant, Yari Ferrante, Panagiotis Charilaos Filippou, Chirag Garg, Stuart Stephen Papworth Parkin
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Patent number: 11557721Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.Type: GrantFiled: February 12, 2021Date of Patent: January 17, 2023Assignees: International Business Machines CorporationInventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S. P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Publication number: 20210175416Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.Type: ApplicationFiled: April 3, 2020Publication date: June 10, 2021Inventors: Jaewoo Jeong, Mahesh G. Samant, Yari Ferrante, Panagiotis Charilaos Filippou, Chirag Garg, Stuart Stephen Papworth Parkin
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Publication number: 20210167280Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.Type: ApplicationFiled: February 12, 2021Publication date: June 3, 2021Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S.P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Patent number: 11005029Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.Type: GrantFiled: September 28, 2018Date of Patent: May 11, 2021Assignees: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
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Patent number: 10957848Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).Type: GrantFiled: February 8, 2019Date of Patent: March 23, 2021Assignees: International Business Machines CorporationInventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S. P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Patent number: 10937953Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0<x?1, wherein Co accounts for at least 0.4 atomic percent of the Heusler compound. The device also includes a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, and 0?d?4. The tetragonal Heusler compound and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. In one aspect, the device also includes a multi-layered structure that is non-magnetic at room temperature. The structure includes alternating layers of Co and E. E includes at least one other element that includes Al. The composition of the structure is represented by Co1-yEy, with y being in the range from 0.45 to 0.55.Type: GrantFiled: January 28, 2019Date of Patent: March 2, 2021Assignees: Samsung Electronics Co., Ltd., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
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Publication number: 20200259076Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1-xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).Type: ApplicationFiled: February 8, 2019Publication date: August 13, 2020Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S.P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Publication number: 20200243755Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0<x?1, wherein Co accounts for at least 0.4 atomic percent of the Heusler compound. The device also includes a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, and 0?d?4. The tetragonal Heusler compound and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. In one aspect, the device also includes a multi-layered structure that is non-magnetic at room temperature. The structure includes alternating layers of Co and E. E includes at least one other element that includes Al. The composition of the structure is represented by Co1-yEy, with y being in the range from 0.45 to 0.55.Type: ApplicationFiled: January 28, 2019Publication date: July 30, 2020Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
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Patent number: 10651234Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2?x?4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.Type: GrantFiled: August 31, 2018Date of Patent: May 12, 2020Assignees: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
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Publication number: 20200105999Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.Type: ApplicationFiled: September 28, 2018Publication date: April 2, 2020Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
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Publication number: 20190305040Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2?x?4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.Type: ApplicationFiled: August 31, 2018Publication date: October 3, 2019Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S.P. Parkin, Yari Ferrante
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Patent number: 10396123Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.Type: GrantFiled: July 26, 2017Date of Patent: August 27, 2019Assignees: International Business Machines Corporation, Samsung Electronics Co., LtdInventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
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Patent number: 10256490Abstract: An apparatus for separating oxygen from a gas mixture includes an oxide layer having ion transport channels therein, which facilitate the migration of oxygen ions from a first side to a second side of the layer. Molecular oxygen is decomposed into oxygen ions at the first side, whereas oxygen ions recombine into molecular oxygen at the second side. A first chamber into which a gas mixture (e.g., air) is admitted is located on the first side of the oxide layer. A second chamber receives oxygen from the oxide layer, and is located on the second side of the oxide layer; the second chamber has a polarizable medium that is in contact with the oxide layer. A gate electrode in contact with the polarizable medium applies an electric field to the second side of the oxide layer, thereby driving oxygen ions across the oxide layer.Type: GrantFiled: June 28, 2016Date of Patent: April 9, 2019Assignee: International Business Machines CorporationInventors: Naga Phani B. Aetukuri, Stuart S. P. Parkin, Mahesh G. Samant
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Patent number: 10247701Abstract: An apparatus includes an oxide layer having ion transport channels that facilitate the migration of oxygen ions from a first side to a second side of the layer. Specifically, molecular oxygen is decomposed into oxygen ions at the first side, and oxygen ions recombine into molecular oxygen at the second side. The apparatus includes a first chamber having a polarizable medium located on the second side of the oxide layer; a second chamber having an analyte that includes dissolved oxygen is located on the first side. The apparatus further includes a gate electrode that is in contact with, and applies a voltage to, the polarizable medium; in this manner, an electric field is applied to the second side of the oxide layer, which drives oxygen ions across the oxide layer. The apparatus can be used as an oxygen sensor, e.g., for detecting oxygen in a liquid such as blood.Type: GrantFiled: June 28, 2016Date of Patent: April 2, 2019Assignee: International Business Machines CorporationInventors: Naga Phani B. Aetukuri, Stuart S. P. Parkin, Mahesh G. Samant
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Publication number: 20190035849Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.Type: ApplicationFiled: July 26, 2017Publication date: January 31, 2019Inventors: JAEWOO JEONG, Stuart S.P. Parkin, Mahesh G. Samant
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Patent number: 10177305Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.Type: GrantFiled: January 19, 2017Date of Patent: January 8, 2019Assignee: International Business Machines CorporationInventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
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Patent number: 10170696Abstract: Materials are disclosed that are used as seed layers in the formation of MRAM elements. In particular, a MnN layer oriented in the (001) direction is grown over a substrate. A magnetic layer overlying and in contact with the MnN layer forms part of a magnetic tunnel junction, in which the magnetic layer includes a Heusler compound that includes Mn. The magnetic tunnel junction includes the magnetic layer, a tunnel barrier overlying the magnetic layer, and a first (magnetic) electrode overlying the tunnel barrier. A second electrode is in contact with the MnN layer.Type: GrantFiled: October 26, 2017Date of Patent: January 1, 2019Assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Stuart S. P. Parkin, Mahesh G. Samant
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Publication number: 20180205008Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.Type: ApplicationFiled: January 19, 2017Publication date: July 19, 2018Inventors: JAEWOO JEONG, Stuart S.P. Parkin, Mahesh G. Samant
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Publication number: 20170370879Abstract: An apparatus includes an oxide layer having ion transport channels that facilitate the migration of oxygen ions from a first side to a second side of the layer. Specifically, molecular oxygen is decomposed into oxygen ions at the first side, and oxygen ions recombine into molecular oxygen at the second side. The apparatus includes a first chamber having a polarizable medium located on the second side of the oxide layer; a second chamber having an analyte that includes dissolved oxygen is located on the first side. The apparatus further includes a gate electrode that is in contact with, and applies a voltage to, the polarizable medium; in this manner, an electric field is applied to the second side of the oxide layer, which drives oxygen ions across the oxide layer. The apparatus can be used as an oxygen sensor, e.g., for detecting oxygen in a liquid such as blood.Type: ApplicationFiled: June 28, 2016Publication date: December 28, 2017Inventors: Naga Phani B. Aetukuri, Stuart S.P. Parkin, Mahesh G. Samant