Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.

Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.

Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.

Abstract: A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.

Abstract: A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract: A magnetic tunnel element that can be used, for example, as part of a read head or a magnetic memory cell, includes a first layer formed from an amorphous material, an amorphous tunnel barrier layer, and an interface layer between the first layer and the tunnel barrier layer. The interface layer is formed from a material that is crystalline when the material is in isolation from both the first layer and the tunnel barrier layer. Alternatively, the thickness of the interface layer is selected so that the interface layer is not crystalline. The first layer is formed from at least one material selected from the group consisting of amorphous ferromagnetic material, amorphous ferromagnetic materials, and amorphous non-magnetic materials. The interface layer is formed from a material selected from the group consisting of a ferromagnetic material and a ferrimagnetic material.

Abstract: Homeotropic liquid crystal displays, and methods for their production and use, are provided. The alignment layers of the subject displays have at least one alignment structure rising from a planar substrate. At least a portion of the wall has a bond anisotropy sufficient to align liquid crystal molecules substantially vertical to the planar substrate of the alignment layer. The subject displays find use in a variety of different applications, including in monitors for use in laptop computers, desktop computers, televisions, and the like.

Abstract: A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.

Abstract: A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.

Abstract: An antiferromagnetically exchange-coupled structure for use in various types of magnetic devices, such as magnetic tunnel junctions and spin-valve giant magnetoresistance recording heads, includes an antiferromagnetic layer formed of an alloy of osmium and manganese, wherein the osmium is present in the range of approximately 10 to 30 atomic %. The antiferromagnetic layer is deposited on a non-reactive underlayer, preferably one formed of a noble metal, such as platinum, palladium or alloys thereof. The antiferromagnetic material provides a strong exchange biasing for the ferromagnetic layer that is deposited on the antiferromagnetic layer. Iridium may be added to the osmium-manganese alloy, wherein the total of osmium and iridium is in the range of the approximately 10 to 30 atomic %, to increase the blocking temperature of the antiferromagnetic material.

Abstract: A method for producing a multi-domain alignment layer, as well as multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject method, an alignment layer is produced on an alignment surface by directing an ion beam or ion beams at the surface at an angle not equal to 90°, so that the ions contact the surface at non-normal incidence. The substrate may be rotated or the ion beam(s) re-directed or the ion beam source moved so that the surface may be bombarded from different directions in different regions resulting in multiple alignment layer domains with differing alignment. In an alternative embodiment, two ion beams with different angles of incidence may be directed at the surface simultaneously or sequentially, thereby creating multiple alignment layer domains without need for rotation of the substrate. The resultant multi-domain alignment layers find use in liquid crystal display devices.

Abstract: A scanning-aperture electron microscope system and method in which a radiation source generates a radiation beam that is incident upon a surface of a sample material causing electrons to be ejected from the surface. When magnetic imaging is being performed, a polarization rotator polarization-modulates the radiation beam. A scanning-aperture probe having an aperture is positioned in proxiity to the surface of the sample material so that photoelectrons ejected from the surface of the sample material pass through the aperture. A detector detects the electrons passing through the aperture. The electron detector outputs a signal in response to the detected electrons that is used for imaging magnetic and/or spectroscopic features of the surface of the sample material. The resolution of the imaged features is about equal to a size of the aperture.

Abstract: A method for producing a multi-domain alignment layer, as well as multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject method, an alignment layer is produced on an alignment surface by directing an ion beam or ion beams at the surface at an angle not equal to 90°, so that the ions contact the surface at non-normal incidence. The substrate may be rotated or the ion beam(s) re-directed or the ion beam source moved so that the surface may be bombarded from different directions in different regions resulting in multiple alignment layer domains with differing alignment. In an alternative embodiment, two ion beams with different angles of incidence may be directed at the surface simultaneously or sequentially, thereby creating multiple alignment layer domains without need for rotation of the substrate. The resultant multi-domain alignment layers find use in liquid crystal display devices.

Abstract: Bombardment of the surface of a substrate with a film layer is used to create alignment layers for liquid crystal displays. By using bombardment of the surface at an angle, both direct creation of the alignment layer or indirect deposition of the alignment layer material onto a glass plate can be achieved.

Abstract: Methods for producing a multi-domain alignment layer, as well as the multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject methods, a surface of an alignment film, usually present on a substrate such a planar component of a polarized material, is bombarded with ions initially at normal incidence in the presence of an electric field in a manner sufficient such that the ions contact the surface of the alignment film at non-normal incidence. In a preferred embodiment, the electric field is produced by an array of conducting means associated with the surface of the alignment film, at least two of which means are differentially biased, e.g. alternately biased. The resultant alignment layers find use in liquid crystal display devices.

Abstract: The present invention is a method for forming a liquid-crystal cell of a liquid-crystal display. Initially, a dry processed alignment film is deposited onto a first transparent substrate using a dry processing technique, such as plasma enhanced chemical vapor deposition (PECVD). The dry processed alignment film is then irradiated with a beam of atoms to arrange the atomic structure of the alignment film in at least one desired direction in order to orient the liquid-crystal molecules. Another dry processed alignment film is deposited on a second substrate using a dry processing technique and, likewise, irradiated with a beam of atoms. The first transparent substrate and the second substrate are then sandwiched together with their respective alignment films spaced adjacent to each other. The space between the films is then filled with a liquid-crystal material.