Patents by Inventor Mahesh J. Thakre

Mahesh J. Thakre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming ferroelectric memory capacitor
    Patent number: 7250349
    Abstract: A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer (70). Using the patterned hard mask layer (255), the layers are etched to form an etched barrier layer (205), and etched first metal layer (215), and etched ferroelectric layer (225), and etched second metal layers (235, 245). The etched layers form a ferroelectric memory capacitor (270) with sidewalls that form an angle with the plane of the upper surface of the dielectric layer (70) between 78° and 88°. The processes used to etch the layers are plasma processes performed at temperatures between 200° C. and 500° C.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: July 31, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Francis G. Celii, Mahesh J. Thakre, Scott R. Summerfelt
  • Method for forming ferroelectric memory capacitor
    Publication number: 20040175954
    Abstract: A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer (70). Using the patterned hard mask layer (255), the layers are etched to form an etched barrier layer (205), and etched first metal layer (215), and etched ferroelectric layer (225), and etched second metal layers (235, 245). The etched layers form a ferroelectric memory capacitor (270) with sidewalls that form an angle with the plane of the upper surface of the dielectric layer (70) between 78° and 88°. The processes used to etch the layers are plasma processes performed at temperatures between 200° C. and 500° C.
    Type: Application
    Filed: June 30, 2003
    Publication date: September 9, 2004
    Inventors: Francis G. Celii, Mahesh J. Thakre, Scott R. Summerfelt