Patents by Inventor Mahesh Neupane

Mahesh Neupane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk direct gap MoS2 by plasma induced layer decoupling
    Patent number: 10680403
    Abstract: Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: June 9, 2020
    Assignees: University of Southern California, The Regents of the University of California
    Inventors: Stephen B. Cronin, Rohan Dhall, Roger Lake, Zhen Li, Mahesh Neupane, Darshana Wickramaratne
  • BULK DIRECT GAP MOS2 BY PLASMA INDUCED LAYER DECOUPLING
    Publication number: 20180026422
    Abstract: Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
    Type: Application
    Filed: December 16, 2015
    Publication date: January 25, 2018
    Applicants: UNIVERSITY OF SOUTHERN CALIFORNIA, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Stephen B. Cronin, Rohan Dhall, Roger Lake, Zhen Li, Mahesh Neupane, Darshana Wickramaratne