Abstract: A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to determine that a power loss event has occurred, determine that one or more blocks are in an erased state, examine a block of the one or more blocks to determine whether the block is a SLC erased block or a TLC erased block, and place the block in a SLC pre-erase heap if the block is the SLC erased block or in a TLC pre-erase heap if the block is the TLC erased block. The controller is further configured to determine a first bit count of page0 for a SLC voltage for the block, determine a second bit count of page1 for a TLC voltage for the block, and classify the block as either a SLC erased block or a TLC erased block.

Abstract: A data storage device includes a memory device having a plurality of blocks and a controller coupled to the memory device. The controller is configured to determine that an uncorrectable error correction code (UECC) failure has occurred to a block of the plurality of blocks, enable a UECC anti-strike mechanism, and erase the block. The UECC anti-strike mechanism comprises converting a read failure associated with the block to an erase failure. The controller is further configured to retire the block upon determining that the erase is unsuccessful.

Abstract: A data storage device includes a memory device having a plurality of blocks and a controller coupled to the memory device. The controller is configured to determine that an uncorrectable error correction code (UECC) failure has occurred to a block of the plurality of blocks, enable a UECC anti-strike mechanism, and erase the block. The UECC anti-strike mechanism comprises converting a read failure associated with the block to an erase failure. The controller is further configured to retire the block upon determining that the erase is unsuccessful.

Abstract: Identifying a faulty memory die in a non-volatile memory storage system. Various methods include: commencing a programming operation of a multi-state block of a subject die, the programming operation including populating a transfer data latch with a first set of data and transferring the data to a first data latch, populating the transfer data latch with a second set of data and transferring the data to second data latch, arranging the first and second data sets in a suitable format of the multi-state block, and writing the data sets to the multi-state block; prior to populating the transfer data latch with the second data set, performing a program suspend and read operation thereby populating the transfer data latch with read data; and comparing the read data to the data contained in the first data latch and, if the comparison results in a match, identifying the subject die as faulty.

Abstract: Detecting a faulty memory block. Various methods include: performing a read operation on a memory block of the memory array, the read operation generates a failed bit count; determining the failed bit count in above a value associated with an overall failed bit count; determining the failed bit count is above a threshold value; in response, performing a confirmation process on the memory block, the confirmation process defining a number of consecutive erase cycles and a level of an erase cycle, the confirmation process results in erase pass or erase fail; and marking the memory block for garbage collection in response to determining the confirmation process results in erase fail. Methods additionally include setting the level of the erase cycle by modifying at least one selected form the group comprising: an erase voltage parameter; an erase verify parameter; and a number of bits ignored during the erase cycle.