Abstract: Compositions and methods for treating hair loss are provided. One embodiment provides a microneedle composition, which when administered to the skin of a subject promotes hair growth. The microneedle compositions include an effective amount of glucocorticoid-induced leucine zipper (GILZ) protein having an amino acid sequence that has 99 or 100% identity to SEQ ID NO: 1, or fragment thereof to promote hair growth when administered to the skin of the subject and a bioerodible, biodegradable, or biosorbable polymer, wherein the composition is formulated as bioerodible, biodegradable, or bioabsorbable microneedles. In one embodiment the GILZ protein or fragment thereof is conjugated to a cell penetrating peptide. The cell penetrating peptide can be TAT GRKKRRQRRRPQ (SEQ ID NO:4) or a variant thereof.

Abstract: Glucocorticoid-induced leucine zipper protein (GILZ) peptide compositions and their methods of use in wound healing are disclosed herein. An exemplary GILZ peptide composition includes a GILZ fusion protein. The GILZ peptide compositions can be administered topically to wounds, for example in the form of a cream, ointment, or lotion. The GILZ peptide compositions can be used to treat acute wounds, induce wound healing in chronic wounds, and reduce scar formation.

Abstract: Compositions and methods for treating hair loss are provided. One embodiment provides a microneedle composition, which when administered to the skin of a subject promotes hair growth. The microneedle compositions includes an effective amount of glucocorticoid-induced leucine zipper (GILZ) protein or fragment thereof to promote hair growth when administered to the skin of the subject and a bioerodible, biodegradable, or biosorbable polymer, wherein the composition is formulated as bioerodible, biodegradable, or bioabsorbable microneedles. In one embodiment the GILZ protein or fragment thereof is conjugated to a cell penetrating peptide. The cell penetrating peptide can be TAT YGRKKRRQRRR or a variant thereof.

Abstract: Glucocorticoid-induced leucine zipper protein (GILZ) peptide compositions and their methods of use in wound healing are disclosed herein. An exemplary GILZ peptide composition includes a GILZ fusion protein. The GILZ peptide compositions can be administered topically to wounds, for example in the form of a cream, ointment, or lotion. The GILZ peptide compositions can be used to treat acute wounds, induce wound healing in chronic wounds, and reduce scar formation.

Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) cell is disclosed. The memory cell comprises a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

Abstract: Methods for detection and diagnosis of Sjögren's Syndrome in a subject, determining the stage or progression of Sjögren's Syndrome in a subject, determining the effectiveness of a treatment for Sjögren's Syndrome, and selecting a subject for treatment for Sjögren's Syndrome are disclosed. The methods typically include measuring the level of one or more Sjögren's Syndrome biomarkers in a biological sample obtained from a subject. Biomarkers for Sjögren's Syndrome include, but are not limited to, GADD153 and Del-1.

Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) cell is disclosed. The memory cell comprises a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

Abstract: A method of writing to a magneto tunnel junction (MTJ) includes writing data to the MTJ, reading the written data using a first reference MTJ and reading the written data using a second reference MTJ. Based on the reading steps and the result of the comparing step, setting a select bit to select the proper reference for future reads.

Abstract: Methods for detection and diagnosis of Sjögren's Syndrome in a subject, determining the stage or progression of Sjögren's Syndrome in a subject, determining the effectiveness of a treatment for Sjögren's Syndrome, and selecting a subject for treatment for Sjögren's Syndrome are disclosed. The methods typically include measuring the level of one or more Sjögren's Syndrome biomarkers in a biological sample obtained from a subject. Biomarkers for Sjögren's Syndrome include, but are not limited to, GADD153 and Del-1.

Abstract: The present invention is directed to a method for reading and writing an STT-MRAM multi-level cell (MLC), which includes a plurality of MTJ memory elements coupled in series. The method detects the resistance states of individual MTJ memory elements in an MLC by sequentially writing each memory element to the low resistance state in order of ascending parallelizing write current threshold. If a written element switches the resistance state thereof after the write step, then the written element was in the high resistance state prior to the write step. Otherwise, the written element was in the low resistance state prior to the write step. The switching of the resistance state can be ascertained by comparing the resistance or voltage values of the plurality of memory elements before and after writing each of the plurality of memory elements in accordance with the embodiments of the present invention.

Abstract: Compositions for activating SGK-1 are provided. SGK-1 activators can be identified by the methods of screening provided herein. The SGK-1 activators can be used in the disclosed methods of reducing cell death and methods of treating ischemic-reperfusion injury. The ischemic-reperfusion injury can be due to a variety of complications resulting in blood loss to tissue and then the re-establishment of blood flow to the tissue.

Abstract: Methods and systems for copyback operations are described. One or more methods include reading data from a first memory unit of a memory device responsive to a copyback command, performing signal processing on the data using a signal processing component local to the memory device, and programming the data to a second memory unit of the memory device.

Abstract: A semiconductor mass storage device can be substituted for a rotating hard disk. The device avoid an erase cycle each time information stored in the mass storage is changed. Erase cycles are avoided by programming an altered data file into an empty mass storage block rather than over itself as a hard disk would. Periodically, the mass storage will need to be cleaned up. Secondly, a circuit and method are provided for evenly using all blocks in the mass storage. These advantages are achieved through the use of several flags, a map to correlate a logical address of a block to a physical address of that block and a count register for each block. In particular, flags are provided for defective blocks, used blocks, old versions of a block, a count to determine the number of times a block has been erased and written and an erase inhibit flag. Reading is performed by providing the logical block address to the memory storage. The system sequentially compares the stored logical block addresses until it finds a match.