Patents by Inventor Mahmoud Khojasteh

Mahmoud Khojasteh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7217496
    Abstract: A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl c
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: May 15, 2007
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud Khojasteh, Pushkara Rao Varanasi, Wenjie Li, Kuang-Jung J Chen, Kaushal S. Patel
  • Patent number: 7183036
    Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: February 27, 2007
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud Khojasteh, Kuang-Jung Chen, Pushkara Rao Varanasi
  • Patent number: 7141692
    Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C., and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
    Type: Grant
    Filed: November 24, 2003
    Date of Patent: November 28, 2006
    Assignee: International Business Machines Corporation
    Inventors: Robert David Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong
  • Publication number: 20060263580
    Abstract: A method of immobilizing a catalyst on a substrate surface involves providing novel ligating copolymers comprising functional groups capable of binding to a substrate surface and functional groups capable of ligating to catalysts such as metal ions, metal complexes, nanoparticles, or colloids; applying the ligating copolymer to a substrate surface to cause the ligating copolymer to bind thereto, and contacting the modified substrate surface with a solution of a catalyst, causing the catalyst to be ligated by the ligating copolymer and thus immobilized on the substrate surface. The ligating copolymer may be patterned on the substrate surface using a method such as microcontact printing.
    Type: Application
    Filed: May 22, 2006
    Publication date: November 23, 2006
    Inventors: Tricia Carmichael, Sarah Vella, Ali Afzali-Ardakani, Mahmoud Khojasteh
  • Patent number: 7129016
    Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: October 31, 2006
    Assignee: International Business Machines Corporation
    Inventors: Mahmoud Khojasteh, Kuang-Jung Chen, Pushkara Rao Varanasi
  • Publication number: 20060134547
    Abstract: A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof.
    Type: Application
    Filed: August 2, 2005
    Publication date: June 22, 2006
    Inventors: Wu-Song Huang, Sean Burns, Mahmoud Khojasteh
  • Publication number: 20060134546
    Abstract: A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof.
    Type: Application
    Filed: December 16, 2004
    Publication date: June 22, 2006
    Applicant: International Business Machines Corporation
    Inventors: Wu-Song Huang, Sean Burns, Mahmoud Khojasteh
  • Publication number: 20060105269
    Abstract: A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl
    Type: Application
    Filed: November 12, 2004
    Publication date: May 18, 2006
    Applicant: International Business Machines Corporation
    Inventors: Mahmoud Khojasteh, Pushkara Varanasi, Wenjie Li, Kuang-Jung Chen, Kaushal Patel
  • Publication number: 20060105266
    Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate/methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate/methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
    Type: Application
    Filed: November 12, 2004
    Publication date: May 18, 2006
    Applicant: International Business Machines Corporation
    Inventors: Mahmoud Khojasteh, Kuang-Jung Chen, Pushkara Varanasi
  • Publication number: 20060105267
    Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
    Type: Application
    Filed: November 12, 2004
    Publication date: May 18, 2006
    Inventors: Mahmoud Khojasteh, Kuang-Jung Chen, Pushkara Varanasi
  • Publication number: 20050112382
    Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.
    Type: Application
    Filed: November 24, 2003
    Publication date: May 26, 2005
    Inventors: Robert Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong
  • Publication number: 20050019704
    Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
    Type: Application
    Filed: August 18, 2004
    Publication date: January 27, 2005
    Inventors: Mahmoud Khojasteh, Timothy Hughes, Ranee Kwong, Pushkara Varanasi, William Brunsvold, Margaret Lawson, Robert Allen, David Medeiros, Ratnam Sooriyakumaran, Phillip Brock
  • Patent number: 4849501
    Abstract: A composition for the application of a planar polyimide coating having a glass transition temperature above 300.degree. C. comprises a solution in an anhydrous, aprotic solvent of an aromatic diamine and a dialkyldihydrogen pyromellitate which is more than 90% meta isomer.
    Type: Grant
    Filed: April 19, 1988
    Date of Patent: July 18, 1989
    Assignee: International Business Machines Corporation
    Inventors: Richard D. Diller, deceased, Anthony F. Arnold, Ying Ying Cheng, Patricia M. Cotts, Donald C. Hofer, Mahmoud Khojasteh, Elwood H. Macy, Prabodh R. Shah, Willi Volksen