Abstract: Provided herein is a novel silica-supported nickel nanocomposite and a novel one-pot solution combustion synthesis of that nanocomposite. The method allows the synthesis of small size nickel nanoparticles (e.g., 3 nm to 40 nm) for which a considerable percentage of nickel is inserted into silica, experiencing strong metal-support interaction. These exceptional physicochemical properties make them desirable for various industrial applications, such as electronic, heterogeneous catalysis as well as conversion and storage of energy.

Abstract: This invention relates to a novel palladium catalyst for the substantially complete oxidative removal of methane from exhaust streams at low operating temperatures compared to other current palladium catalysts and to methods of preparing the catalyst. Use of the catalyst to remove methane from vehicle exhaust streams, crude oil production and processing exhaust streams, petroleum refining exhaust streams and natural gas production and processing exhaust streams.

Abstract: Provided herein is a novel silica-supported nickel nanocomposite and a novel one-pot solution combustion synthesis of that nanocomposite. The method allows the synthesis of small size nickel nanoparticles (e.g., 3 nm to 40 nm) for which a considerable percentage of nickel is inserted into silica, experiencing strong metal-support interaction. These exceptional physicochemical properties make them desirable for various industrial applications, such as electronic, heterogeneous catalysis as well as conversion and storage of energy.

Abstract: This invention relates to a novel nickel catalyst and a novel one-pot solution combustion synthesis of that catalyst for the CO2 reforming and low temperature steam reformation of methane. The novel nickel catalyst has exceptional activity for dry reforming and steam reforming of methane, and exhibits excellent resilience to deactivation due to carbon formation.

Abstract: A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

Abstract: This invention relates to a novel nickel catalyst and a novel one-pot solution combustion synthesis of that catalyst for the CO2 reforming and low temperature steam reformation of methane. The novel nickel catalyst has exceptional activity for dry reforming and steam reforming of methane, and exhibits excellent resilience to deactivation due to carbon formation.

Abstract: This invention relates to a novel palladium catalyst for the substantially complete oxidative removal of methane from exhaust streams at low operating temperatures compared to other current palladium catalysts and to methods of preparing the catalyst. Use of the catalyst to remove methane from vehicle exhaust streams, crude oil production and processing exhaust streams, petroleum refining exhaust streams and natural gas production and processing exhaust streams.

Abstract: A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

Abstract: A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

Abstract: A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

Abstract: A novel, activated catalyst is provided for the synthesis of ammonia via the photoassisted reduction of molecular nitrogen by water. The novel catalyst is an incompletely reoxidized hydrogen reduced ferric oxide which is prepared by the reduction of an iron oxide such as .alpha.-Fe.sub.2 O.sub.3 in an atmosphere of water vapor and hydrogen followed by oxidation oxygen or in air. The use of the activated catalyst in photoassisted methods for synthesis of ammonia produces yields of ammonia which are many times the stoichiometric equivalent of the Fe(II) in the catalyst employed.