Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

Abstract: The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

Abstract: Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.

Abstract: Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc.The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.

Abstract: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

Abstract: Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.

Abstract: A composition for the application of a planar polymide coating having a glass transition temperature above 300.degree. C. comprises a solution in an anhydrous, aprotic solvent of .Iadd.the reaction product .Iaddend.of an aromatic diamine and a .[.dialkyldihydrogen.]. .Iadd.dialkyl .Iaddend.pyromellitate .Iadd.diacyl chloride .Iaddend.which .[.is more than.]. .Iadd.comprises about .Iaddend.90% .Iadd.or more .Iaddend.meta isomer.