Patents by Inventor Mahmoud Mousa

Mahmoud Mousa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080108185
    Abstract: An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
    Type: Application
    Filed: December 20, 2007
    Publication date: May 8, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mahmoud Mousa, Christopher Putnam
  • Publication number: 20070262345
    Abstract: A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
    Type: Application
    Filed: July 23, 2007
    Publication date: November 15, 2007
    Inventors: Robert Gauthier, Junjun Li, Souvick Mitra, Mahmoud Mousa, Christopher Putnam
  • Publication number: 20070170512
    Abstract: Disclosed are a silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
    Type: Application
    Filed: January 20, 2006
    Publication date: July 26, 2007
    Inventors: Robert Gauthier, Jr., Junjun Li, Souvick Mitra, Mahmoud Mousa, Christopher Putnam
  • Publication number: 20070097570
    Abstract: Method and device for protecting against electrostatic discharge. The method includes configuring a gate of at least one upper transistor of a transistor network connected between power rails to be biased to a prescribed value, and coupling an electrostatic discharge event to a gate of a lower transistor of the transistor network. The at least one upper and at least one lower transistors of the transistor network are respectively coupled between the power rails from a higher voltage to a lower voltage.
    Type: Application
    Filed: December 21, 2006
    Publication date: May 3, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kiran CHATTY, Robert GAUTHIER, Mahmoud MOUSA, Mujahid MUHAMMAD, Christopher PUTNAM
  • Publication number: 20060226491
    Abstract: An apparatus and method for an inverted multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device may be different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with an active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
    Type: Application
    Filed: April 6, 2005
    Publication date: October 12, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert Gauthier, Mahmoud Mousa, Christopher Putnam
  • Publication number: 20060072267
    Abstract: A structure and apparatus is provided for an electrostatic discharge power clamp, for use with high voltage power supplies. The power clamp includes a network of transistor devices, for example, nFETs arranged in series between a power rail and a ground rail. The first transistor device is biased into a partially on-state, and thus, neither device sees the full voltage potential between the power rail and the ground rail. Accordingly, the power clamp can function in voltage environments higher than the native voltage of the transistor devices. Additionally, the second transistor device is controlled by an RC network functioning as a trigger which allows the second transistor device to turn on during a voltage spike such as occurs during an ESD event. The capacitor of the RC network may be small thereby requiring small real estate on the integrated circuit. The clamp may have fast turn-on times as well as conducting current for long periods of time after turning on.
    Type: Application
    Filed: October 1, 2004
    Publication date: April 6, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kiran Chatty, Robert Gauthier, Mahmoud Mousa, Mujahid Muhammad, Christopher Putnam
  • Publication number: 20060043571
    Abstract: An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
    Type: Application
    Filed: August 30, 2004
    Publication date: March 2, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mahmoud Mousa, Christopher Putnam