Abstract: An apparatus includes a conductive or semiconductive substrate and a dielectric layer located directly thereon. A semiconductor layer is located directly on the dielectric layer. The semiconductor layer includes a ridge waveguide and a heater strip extending parallel to the ridge waveguide. The heater strip is electrically isolated from the ridge waveguide and is doped to carry a current therein about parallel to the ridge waveguide.

Abstract: Variable optical attenuator (VOA) formed by disposing upon a substrate a waveguide, a p-type region and an n-type region about the waveguide, and an epi-silicon region disposed upon the waveguide, the VOA responsive to a bias current to controllably inject carriers into the waveguide to attenuate thereby optical signal propagating through the waveguide.

Abstract: An arrayed-waveguide grating (AWG) whose thermal-shift characteristics can be tailored to match the corresponding characteristics of another optical device (e.g., a solid-state laser or modulator) to which the AWG is intended to be coupled. In one embodiment, the physical means that enable the match of the thermal-shift characteristics include one or more wedge-shaped structures placed into one or both of the waveguide-coupling regions of the AWG. By appropriately selecting the structure's material, shape, and orientation and also the number of structures, the AWG can be manufactured to have substantially the same thermal-shift coefficient as the other optical device. As a result, the AWG can advantageously remain in optimal spectral alignment with the optical device despite temperature fluctuations and, as such, does not require a thermostat or temperature controller for proper operation.

Abstract: Variable optical attenuator (VOA) formed by disposing upon a substrate a waveguide, a p-type region and an n-type region about the waveguide, and an epi-silicon region disposed upon the waveguide, the VOA responsive to a bias current to controllably inject carriers into the waveguide to attenuate thereby optical signal propagating through the waveguide.

Abstract: Variable optical attenuator (VOA) formed by disposing upon a substrate a waveguide, a p-type region and an n-type region about the waveguide, and an epi-silicon region disposed upon the waveguide, the VOA responsive to a bias current to controllably inject carriers into the waveguide to attenuate thereby optical signal propagating through the waveguide.

Abstract: Triplexer formed by disposing upon a substrate a highly confined silicon waveguide including one or more polarization-diverse lattice filters that are monolithically integrated with photodetectors, such as PIN or APD.

Abstract: An apparatus includes a conductive or semiconductive substrate and a dielectric layer located directly thereon. A semiconductor layer is located directly on the dielectric layer. The semiconductor layer includes a ridge waveguide and a heater strip extending parallel to the ridge waveguide. The heater strip is electrically isolated from the ridge waveguide and is doped to carry a current therein about parallel to the ridge waveguide.

Abstract: Variable optical attenuator (VOA) formed by disposing upon a substrate a waveguide, a p-type region and an n-type region about the waveguide, and an epi-silicon region disposed upon the waveguide, the VOA responsive to a bias current to controllably inject carriers into the waveguide to attenuate thereby optical signal propagating through the waveguide.