Patents by Inventor Mahmut KAVRIK

Mahmut KAVRIK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanolaminate structure, semiconductor device and method of forming nanolaminate structure
    Patent number: 10840350
    Abstract: The present disclosure provides a method of forming a nanolaminate structure. First, a pre-treatment is performed on a semiconductor substrate, in which the semiconductor substrate includes SiGe. Then, a first metal oxide layer is formed on the semiconductor substrate. Then, at least one second metal oxide layer and at least one third metal oxide layer are alternately stacked on the first metal oxide layer, thereby forming a nanolaminate structure. And, a conductive gate layer is formed on the nanolaminate structure.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: November 17, 2020
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Zi-Wei Fang, Hong-Fa Luan, Wilman Tsai, Kasra Sardashti, Maximillian Clemons, Scott Ueda, Mahmut Kavrik, Iljo Kwak, Andrew Kummel, Hsiang-Pi Chang
  • NANOLAMINATE STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF FORMING NANOLAMINATE STRUCTURE
    Publication number: 20180122916
    Abstract: The present disclosure provides a method of forming a nanolaminate structure. First, a pre-treatment is performed on a semiconductor substrate, in which the semiconductor substrate includes SiGe. Then, a first metal oxide layer is formed on the semiconductor substrate. Then, at least one second metal oxide layer and at least one third metal oxide layer are alternately stacked on the first metal oxide layer, thereby forming a nanolaminate structure. And, a conductive gate layer is formed on the nanolaminate structure.
    Type: Application
    Filed: August 22, 2017
    Publication date: May 3, 2018
    Inventors: Zi-Wei FANG, Hong-Fa LUAN, Wilman TSAI, Kasra SARDASHTI, Maximillian CLEMONS, Scott UEDA, Mahmut KAVRIK, Iljo KWAK, Andrew KUMMEL, Hsiang-Pi CHANG