Patents by Inventor Mai MURAMOTO

Mai MURAMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit
    Patent number: 8779844
    Abstract: A semiconductor integrated circuit according to an embodiment includes a transfer transistor including a first gate electrode, the first gate electrode and a diffusion layer being diode-connected with a first wiring, and a clock signal line to which a clock signal is supplied, at least a portion of a first partial clock signal line, which is a portion of the clock signal line, being formed above the first gate electrode.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: July 15, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mai Muramoto, Takatoshi Minamoto
  • SEMICONDUCTOR INTEGRATED CIRCUIT
    Publication number: 20120306570
    Abstract: A semiconductor integrated circuit according to an embodiment includes a transfer transistor including a first gate electrode, the first gate electrode and a diffusion layer being diode-connected with a first wiring, and a clock signal line to which a clock signal is supplied, at least a portion of a first partial clock signal line, which is a portion of the clock signal line, being formed above the first gate electrode.
    Type: Application
    Filed: December 12, 2011
    Publication date: December 6, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mai MURAMOTO, Takatoshi Minamoto