Abstract: A method of forming an anti-reflective coating is described. A film is formed on a substrate. A first layer of an anti-reflective coating layer Is deposited on the film by chemical vapor deposition using a canrier gas, an organic halide gas and a hydrogen halide gas as gas sources. A second layer of the anti-reflective coating layer is formed on the first layer of the anti-reflective coating layer by chemical vapor deposition using a carrier gas and an organic halide gas as gas sources. A photoresist layer is formed on the second layer of the anti-reflective coating layer.

Abstract: A method for forming organic anti-reflective coating (ARC) is disclosed in the present invention. A substrate is provided and an ARC is deposited on the substrate using reactive gas. The reactive gas comprising compound gas containing carbon atom, hydrogen atom and halogen atom, where said compound gas has a general formula of CxHyXz, X is halogen element, x ranges from 0 to 5, y ranges from 0 to 9 and z ranges from 0 to 9. The reactive gas could be injected into a chamber with carrier gas, which is helium gas or argon gas.

Abstract: A method for fabricating landing pads for DRAM cells is disclosed. The method comprises following steps: At first, a substrate formed with isolation regions, periphery transistor region and a defined DRAM region are patterned so that an oxide layer on the defined DRAM region are removed to expose the source/drain region nitride caps, and nitride spacers. After a polysilicon layer is formed on all resulting surfaces, a photoresist pattern is subsequently formed on the polysilicon layer of the DRAM region so that the photoresist openings over the nitride cap are formed. Next, a conformal polymer layer of about 0.1 .mu.m in thickness is formed on all resulting surfaces so that a smaller polymer opening about 0.1 .mu.m size or beyond is formed in each of the photoresist openings. Finally, using the polymer layer as a mask and the nitride cap as a stopping layer, a polymer etching and a polysilicon etching are performed so that the landing pads are generated.