Abstract: A surface treatment agent containing a silylating agent (A) and a compound (C) having an amide skeleton in a molecule, and a surface treatment method for subjecting an object to be treated to surface treatment using the surface treatment agent.

Abstract: A metal residue removing liquid including a mixed solvent containing a first organic solvent and a second organic solvent, a salt of a base containing no metal ions and hydrofluoric acid, and water, in which the first organic solvent is diethylformamide, and the mixed solvent has a value of 0.6 or more, which is obtained by subtracting a hydrogen bond term of a Hansen solubility parameter from a polar term of the Hansen solubility parameter.

Abstract: A metal resist remover containing a solvent and a sulfuric acid, in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.

Abstract: A metal resist remover containing a solvent and a strong acid that is liquid at 20° C., in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.

Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Abstract: A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Abstract: A ruthenium etching solution including orthoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element.

Abstract: A surface treatment agent containing a silylating agent (A) and a compound (C) having an amide skeleton in a molecule, and a surface treatment method for subjecting an object to be treated to surface treatment using the surface treatment agent.

Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: A method of forming a resist pattern, and a film including a metal-containing compound formed on the resist pattern while developing the resist pattern. The method uses an organic solvent developer liquid, in which a metal compound capable of generating a hydroxyl group upon hydrolysis is dissolved in an organic solvent that does not have a functional group that reacts with the metal compound.

Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Abstract: A stripping solution that is used for removal of titanium or a titanium compound, whereby superior stripping removal performance of the solution can be stably maintained when the solution is continuously circulated, and a method of wiring formation using the stripping solution. The stripping solution includes a basic compound, hydrogen peroxide, water, and at least one of an alkali metal silicate and a bisphosphonate compound. The titanium compound may be titanium nitride, and the stripping solution may be used for removal of a hard mask including titanium or a titanium compound.

Abstract: A monosilane compound or bissilane compound of a specific structure having dimethylamino groups is contained in a surface treatment agent used in the hydrophobization treatment of substrate surfaces.

Abstract: A method for modifying a substrate surface using a silylating agent that is capable of successfully modifying the substrate surface regardless of the substrate material; a modifying film which successfully adheres to a substrate surface regardless of the material of the substrate and provides a substrate that is surface-modified to a desired extent; and a coating solution which is capable of forming a coating film on a substrate surface. A silane compound layer is formed on the surface of the coating film by a silylating agent and is firmly affixed thereto. The surface of a substrate is treated with a metal compound that is capable of producing a hydroxyl group by hydrolysis. The substrate surface which has been treated with the metal compound is then treated with a silylating agent.

Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.

Abstract: A method of forming a resist pattern, and a film including a metal-containing compound formed on the resist pattern while developing the resist pattern. The method uses an organic solvent developer liquid, in which a metal compound capable of generating a hydroxyl group upon hydrolysis is dissolved in an organic solvent that does not have a functional group that reacts with the metal compound.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.