Patents by Inventor Mai SUGIKAWA
Mai SUGIKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10147747Abstract: A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.Type: GrantFiled: August 12, 2015Date of Patent: December 4, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Toriumi, Yoshikazu Hiura, Mai Sugikawa
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Patent number: 9917204Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: GrantFiled: February 16, 2016Date of Patent: March 13, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tadashi Nakano, Mai Sugikawa, Kosei Noda
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Patent number: 9852850Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.Type: GrantFiled: July 17, 2015Date of Patent: December 26, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Nobuhiro Inoue, Ryota Tajima, Kazutaka Kuriki, Mitsuhiro Ichijo, Yoshikazu Hiura, Mai Sugikawa
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Publication number: 20160163874Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: ApplicationFiled: February 16, 2016Publication date: June 9, 2016Inventors: Tadashi NAKANO, Mai SUGIKAWA, Kosei NODA
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Patent number: 9293590Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: GrantFiled: May 26, 2015Date of Patent: March 22, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tadashi Nakano, Mai Sugikawa, Kosei Noda
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Publication number: 20160056179Abstract: A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.Type: ApplicationFiled: August 12, 2015Publication date: February 25, 2016Inventors: Satoshi TORIUMI, Yoshikazu HIURA, Mai SUGIKAWA
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Publication number: 20160020035Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.Type: ApplicationFiled: July 17, 2015Publication date: January 21, 2016Inventors: Nobuhiro INOUE, Ryota TAJIMA, Kazutaka KURIKI, Mitsuhiro ICHIJO, Yoshikazu HIURA, Mai SUGIKAWA
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Publication number: 20150255617Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: ApplicationFiled: May 26, 2015Publication date: September 10, 2015Inventors: Tadashi NAKANO, Mai SUGIKAWA, Kosei NODA
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Patent number: 9082860Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: GrantFiled: March 21, 2012Date of Patent: July 14, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tadashi Nakano, Mai Sugikawa, Kosei Noda
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Publication number: 20120248433Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.Type: ApplicationFiled: March 21, 2012Publication date: October 4, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Tadashi NAKANO, Mai SUGIKAWA, Kosei NODA