Abstract: In described examples, an integrated circuit includes first and second current sources, first and second switches, a dV/dt phase detector, a control circuit, and source, gate, and drain terminals for coupling to, respectively, a source, gate, and drain of a power FET. The first switch is coupled between the first current source and the gate terminal. The second switch is coupled between the second current source and the gate terminal. The dV/dt phase detector detects a dV/dt phase of the power FET and outputs to the control circuit. The control circuit controls the first and second switches to perform a turn-on sequence of the power FET, including: closing the first switch while keeping the second switch open; and after receiving a signal from the dV/dt phase detector indicating the dV/dt phase has started, opening the first switch, and closing the second switch.

Abstract: A circuit includes a half-bridge circuit is configured to provide a switching voltage responsive to respective high-side and low-side drive signals. High-side slew control circuitry is configured to provide a high-side slew-compensated control signal responsive to a high-side enable signal and a slew current signal representative of a slew rate at a switching output. A high-side driver is configured to provide the high-side drive signal responsive to the high-side slew-compensated control signal. Low-side slew control circuitry is configured to provide a low-side slew-compensated drive signal responsive to a low-side enable signal and the slew current signal. A low-side driver is configured to provide the low-side drive signal responsive to the low-side slew-compensated control signal. A capacitor is coupled between the high-side and low-side slew control circuitry and is configured to convert the slew rate to the slew current signal.

Abstract: A startup circuit adapted to be coupled to an input voltage supply and operable to supply an output voltage at an output terminal, the startup circuit including: a first transistor having a first control terminal, a first current terminal and a second current terminal, the first current terminal adapted to be coupled to the input voltage supply and the second current terminal coupled to the output terminal; a precharge circuit having a first terminal, a second terminal and a third terminal, the second terminal adapted to be coupled to the input voltage supply and the third terminal coupled to the first control terminal; a current limiter coupled to the precharge circuit, the first control terminal and the second current terminal; a second transistor having a second control terminal, a third current terminal and a fourth current terminal, the third current terminal coupled to the precharge circuit and the second control terminal adapted to be coupled to a control signal; and a third transistor having a third c

Abstract: A depletion-mode current source having a saturation current of sufficient accuracy for use as a pre-charge circuit in a start-up circuit of an AC-to-DC power converter is fabricated using an enhancement-mode-only process. The depletion-mode current source can be fabricated on the same integrated circuit (IC) as a gallium nitride field-effect transistor (FET) and resistive and capacitive components used in the start-up circuit, without affecting the enhancement-mode-only fabrication process by requiring additional masks or materials, as would be required to fabricate a depletion-mode FET on the same IC as an enhancement-mode FET. The current source includes a resistive patterned two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) channel coupled between two terminals and one or more metal field plates extending from one of the terminals and overlying the patterned area of the channel, the field plates being separated from the channel and from each other by dielectric layers.

Abstract: Reference voltage generation circuits and related methods are disclosed. An example reference voltage generation circuit includes a voltage generating circuit including an enhancement mode (E-mode) gallium nitride (GaN) transistor, the voltage generating circuit to, in response to a first clock signal having a first phase, generate a first voltage associated with the E-mode GaN transistor, and, in response to a second clock signal having a second phase different from the first phase, generate a second voltage associated with the E-mode GaN transistor, and a switching capacitor circuit coupled to the voltage generating circuit, the switching capacitor circuit to generate a reference voltage based on a difference between the first voltage and the second voltage.

Abstract: Gate drivers and auto-zero comparators are disclosed. An example integrated circuit includes a transistor comprising a gate terminal and a current terminal, a gallium nitride (GaN) gate driver coupled to the gate terminal, the GaN gate driver configured to adjust operation of the transistor, and an enhancement mode GaN comparator coupled to at least one of the transistor the GaN gate driver, the enhancement mode GaN comparator configured to compare a voltage to a reference voltage, the voltage based on current from the current terminal, the GaN gate driver configured to adjust the operation of the transistor based on the comparison.

Abstract: The present invention provides a capacitor having a first structure made of a metal layer and a second structure made of the same metal layer and a dielectric layer between the first and the second metal structure, wherein the dielectric layer has a relative permittivity greater than 4, in particular greater than 6. It also provides a monolithically integrated circuit including such a capacitor and optionally other components. A method of manufacturing such a capacitor is also provided.

Abstract: Reference voltage generation circuits and related methods are disclosed. An example reference voltage generation circuit includes a voltage generating circuit including an enhancement mode (E-mode) gallium nitride (GaN) transistor, the voltage generating circuit to, in response to a first clock signal having a first phase, generate a first voltage associated with the E-mode GaN transistor, and, in response to a second clock signal having a second phase different from the first phase, generate a second voltage associated with the E-mode GaN transistor, and a switching capacitor circuit coupled to the voltage generating circuit, the switching capacitor circuit to generate a reference voltage based on a difference between the first voltage and the second voltage.

Abstract: A startup circuit adapted to be coupled to an input voltage supply and operable to supply an output voltage at an output terminal, the startup circuit including: a first transistor having a first control terminal, a first current terminal and a second current terminal, the first current terminal adapted to be coupled to the input voltage supply and the second current terminal coupled to the output terminal; a precharge circuit having a first terminal, a second terminal and a third terminal, the second terminal adapted to be coupled to the input voltage supply and the third terminal coupled to the first control terminal; a current limiter coupled to the precharge circuit, the first control terminal and the second current terminal; a second transistor having a second control terminal, a third current terminal and a fourth current terminal, the third current terminal coupled to the precharge circuit and the second control terminal adapted to be coupled to a control signal; and a third transistor having a third c

Abstract: A startup circuit includes an enhancement mode transistor with a drain coupled to a startup circuit input, a source coupled to a first node, and a gate coupled to a second node. The startup circuit includes a current limiting circuit that controls a current path between the second node and a startup circuit output node based on a current sense voltage signal representing a current through the enhancement mode transistor, and a voltage regulation circuit controls a voltage of the second node to regulate a startup circuit output voltage of the startup circuit output node.

Abstract: Gate drivers and auto-zero comparators are disclosed. An example integrated circuit includes a transistor comprising a gate terminal and a current terminal, a gallium nitride (GaN) gate driver coupled to the gate terminal, the GaN gate driver configured to adjust operation of the transistor, and an enhancement mode GaN comparator coupled to at least one of the transistor the GaN gate driver, the enhancement mode GaN comparator configured to compare a voltage to a reference voltage, the voltage based on current from the current terminal, the GaN gate driver configured to adjust the operation of the transistor based on the comparison.

Abstract: A startup circuit includes an enhancement mode transistor with a drain coupled to a startup circuit input, a source coupled to a first node, and a gate coupled to a second node. The startup circuit includes a current limiting circuit that controls a current path between the second node and a startup circuit output node based on a current sense voltage signal representing a current through the enhancement mode transistor, and a voltage regulation circuit controls a voltage of the second node to regulate a startup circuit output voltage of the startup circuit output node.