Abstract: A dielectric piece includes an energy barrier layer and a plurality of crystalline metal compound dots distributed in the energy barrier layer. The material of the crystalline metal compound dots is different from that of the energy barrier layer. Due to its capability of retaining charges, the dielectric piece of the present invention meets the requirements of semiconductor devices in this and the next generation so as to be applied to complementary metal oxide semiconductors (CMOS), non-volatile memory devices, or capacitors as inter-gate dielectric layers, charge storage layers, or dielectric layers of capacitors.

Abstract: A method of fabricating a dielectric piece which includes metal compound dots is provided. A stacked layer formed over the substrate includes a metal compound layer and an energy barrier layer. A process such as an oxidization annealing process is then performed so that the metal compound layer is transformed into a great number of crystalline metal compound dots distributed in the energy barrier layer.

Abstract: A method of fabricating a dielectric piece which includes metal compound dots is provided. A stacked layer formed over the substrate includes a metal compound layer and an energy barrier layer. A process such as an oxidization annealing process is then performed so that the metal compound layer is transformed into a great number of crystalline metal compound dots distributed in the energy barrier layer.