Patents by Inventor Maikel Van Hest

Maikel Van Hest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
    Patent number: 9105797
    Abstract: An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: August 11, 2015
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Calvin J. Curtis, Peter A. Hersh, Alexander Miedaner, Susan Habas, Maikel van Hest, David S. Ginley
  • Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
    Patent number: 8876971
    Abstract: Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: November 4, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Calvin J. Curtis, Alexander Miedaner, Maikel Van Hest, David S. Ginley
  • Methods For Producing Thin Film Charge Selective Transport Layers
    Publication number: 20140256081
    Abstract: Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
    Type: Application
    Filed: March 7, 2014
    Publication date: September 11, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Scott Ryan Hammond, Dana C. Olson, Maikel Van Hest
  • USING AMORPHOUS ZINC-TIN OXIDE ALLOYS IN THE EMITTER STRUCTURE OF CIGS PV DEVICES
    Publication number: 20140020744
    Abstract: A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.
    Type: Application
    Filed: January 3, 2013
    Publication date: January 23, 2014
    Inventors: Peter Hersh, Maikel van Hest, David Ginley, John Perkins, Vincent Bollinger
  • Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
    Patent number: 8057850
    Abstract: Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: November 15, 2011
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Calvin J. Curtis, Alexander Miedaner, Maikel Van Hest, David S. Ginley, Jennifer A. Nekuda
  • Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors
    Publication number: 20090280598
    Abstract: Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticlulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium galium selenide films (66) on substrates (52).
    Type: Application
    Filed: November 9, 2006
    Publication date: November 12, 2009
    Applicant: Midwest Research Institute
    Inventors: Calvin J. Curtis, Alexander Miedaner, Maikel Van Hest, David S. Ginley, Jennifer A. Nekuda