Patents by Inventor Majeed Foad
Majeed Foad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240277324Abstract: Flexible elongate devices and methods include an articulable body portion and a control structure attached with one or more pull wires that control articulation of the articulable body portion. The control structure includes a metallic material that defines a sealing surface functionalized by a primer. A polymer material disposed onto the sealing surface of the control structure creates a seal between the control structure and polymer material. Flexible elongate devices and methods also include a control structure and a pull wire configured to control articulation of the flexible elongate device. The control structure includes a plurality of control segments stacked along a longitudinal axis, where each of the control segments define a pull wire aperture, where pull wire apertures of adjacent control segments are offset relative to one another, such that a portion of the pull wire extending through the pull wire apertures has a non-linear shape.Type: ApplicationFiled: February 15, 2024Publication date: August 22, 2024Inventors: Pak Yan Yuen, Joseph Bogusky, Joseph Callol, Jason Chan, Vijay Thadani, Arnold Chen, Saul Hernandez Morales, Worth Walters, David Solum, Wadiyat Abbas, Majeed Foad, Lucas Gordon, Stephen Kaplan
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Patent number: 10788744Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.Type: GrantFiled: January 6, 2017Date of Patent: September 29, 2020Assignee: Applied Materials, Inc.Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
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Patent number: 10551731Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.Type: GrantFiled: December 19, 2014Date of Patent: February 4, 2020Assignee: Applied Materials, Inc.Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
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Patent number: 10209613Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: GrantFiled: May 27, 2016Date of Patent: February 19, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
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Patent number: 10012897Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.Type: GrantFiled: January 13, 2017Date of Patent: July 3, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
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Patent number: 9829805Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: GrantFiled: November 21, 2016Date of Patent: November 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
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Publication number: 20170131627Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.Type: ApplicationFiled: January 13, 2017Publication date: May 11, 2017Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
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Publication number: 20170115555Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.Type: ApplicationFiled: January 6, 2017Publication date: April 27, 2017Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
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Patent number: 9632411Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: GrantFiled: December 23, 2013Date of Patent: April 25, 2017Assignee: Applied Materials, Inc.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
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Publication number: 20170068174Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: ApplicationFiled: November 21, 2016Publication date: March 9, 2017Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
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Publication number: 20160377972Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.Type: ApplicationFiled: December 19, 2014Publication date: December 29, 2016Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
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Publication number: 20160341544Abstract: A monitoring system and method of operation thereof includes: providing a substrate on a platform; performing a scan of the substrate; depositing a material layer on the substrate; monitoring a deposition thickness of the material layer; and generating an alert based on an error in the deposition thickness.Type: ApplicationFiled: December 19, 2014Publication date: November 24, 2016Inventor: Majeed Foad
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Publication number: 20160274454Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: ApplicationFiled: May 27, 2016Publication date: September 22, 2016Applicant: Applied Materials, Inc.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
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Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
Patent number: 9354508Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: GrantFiled: December 23, 2013Date of Patent: May 31, 2016Assignee: Applied Materials, Inc.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson -
Publication number: 20140268082Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
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PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
Publication number: 20140268080Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson -
Publication number: 20140272684Abstract: A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
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Patent number: 8642128Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.Type: GrantFiled: April 12, 2010Date of Patent: February 4, 2014Assignee: Applied Materials, Inc.Inventors: Dongwon Choi, Dong Hyung Lee, Tze Poon, Manoj Vellaikal, Peter Porshnev, Majeed Foad
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Patent number: 8551578Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: GrantFiled: October 22, 2008Date of Patent: October 8, 2013Assignee: Applied Materials, Inc.Inventors: Omkaram Nalamasu, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
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Patent number: 8535766Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.Type: GrantFiled: October 22, 2008Date of Patent: September 17, 2013Assignee: Applied Materials, Inc.Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna