Patents by Inventor Majeed Foad

Majeed Foad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240277324
    Abstract: Flexible elongate devices and methods include an articulable body portion and a control structure attached with one or more pull wires that control articulation of the articulable body portion. The control structure includes a metallic material that defines a sealing surface functionalized by a primer. A polymer material disposed onto the sealing surface of the control structure creates a seal between the control structure and polymer material. Flexible elongate devices and methods also include a control structure and a pull wire configured to control articulation of the flexible elongate device. The control structure includes a plurality of control segments stacked along a longitudinal axis, where each of the control segments define a pull wire aperture, where pull wire apertures of adjacent control segments are offset relative to one another, such that a portion of the pull wire extending through the pull wire apertures has a non-linear shape.
    Type: Application
    Filed: February 15, 2024
    Publication date: August 22, 2024
    Inventors: Pak Yan Yuen, Joseph Bogusky, Joseph Callol, Jason Chan, Vijay Thadani, Arnold Chen, Saul Hernandez Morales, Worth Walters, David Solum, Wadiyat Abbas, Majeed Foad, Lucas Gordon, Stephen Kaplan
  • Patent number: 10788744
    Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: September 29, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
  • Patent number: 10551731
    Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
  • Patent number: 10209613
    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: February 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
  • Patent number: 10012897
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 9829805
    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: November 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
  • Publication number: 20170131627
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 11, 2017
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20170115555
    Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
    Type: Application
    Filed: January 6, 2017
    Publication date: April 27, 2017
    Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
  • Patent number: 9632411
    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: April 25, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
  • Publication number: 20170068174
    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 9, 2017
    Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
  • Publication number: 20160377972
    Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
    Type: Application
    Filed: December 19, 2014
    Publication date: December 29, 2016
    Inventors: Ralf Hofmann, Majeed Foad, Cara Beasley
  • Publication number: 20160341544
    Abstract: A monitoring system and method of operation thereof includes: providing a substrate on a platform; performing a scan of the substrate; depositing a material layer on the substrate; monitoring a deposition thickness of the material layer; and generating an alert based on an error in the deposition thickness.
    Type: Application
    Filed: December 19, 2014
    Publication date: November 24, 2016
    Inventor: Majeed Foad
  • Publication number: 20160274454
    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
    Type: Application
    Filed: May 27, 2016
    Publication date: September 22, 2016
    Applicant: Applied Materials, Inc.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
  • Patent number: 9354508
    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: May 31, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
  • Publication number: 20140268082
    Abstract: A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
    Type: Application
    Filed: December 23, 2013
    Publication date: September 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Timothy Michaelson, Timothy W. Weidman, Barry Lee Chin, Majeed Foad, Paul Deaton
  • Publication number: 20140268080
    Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
    Type: Application
    Filed: December 23, 2013
    Publication date: September 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Cara Beasley, Ralf Hofmann, Majeed Foad, Timothy Michaelson
  • Publication number: 20140272684
    Abstract: A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
    Type: Application
    Filed: December 23, 2013
    Publication date: September 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Ralf Hofmann, Cara Beasley, Majeed Foad
  • Patent number: 8642128
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: February 4, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Dongwon Choi, Dong Hyung Lee, Tze Poon, Manoj Vellaikal, Peter Porshnev, Majeed Foad
  • Patent number: 8551578
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: October 8, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Omkaram Nalamasu, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Patent number: 8535766
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: September 17, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna