Patents by Inventor Majid Movahed Mansoorz

Majid Movahed Mansoorz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100022062
    Abstract: The present invention provides a transistor 100 having a germanium implant region 170 located therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor 100, in one embodiment, includes a polysilicon gate electrode 140 located over a semiconductor substrate 110, wherein a sidewall of the polysilicon gate electrode 140 has a germanium implanted region 170 located therein. The transistor 100 further includes source/drain regions 160 located within the semiconductor substrate 110 proximate the polysilicon gate electrode 140.
    Type: Application
    Filed: October 5, 2009
    Publication date: January 28, 2010
    Applicant: Texas Instruments Incorporated
    Inventors: Kaiping Liu, Zhiqiang Wu, Majid Movahed Mansoorz
  • Patent number: 7118979
    Abstract: The present invention provides a transistor 100 having a germanium implant region 170 located therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor 100, in one embodiment, includes a polysilicon gate electrode 140 located over a semiconductor substrate 110, wherein a sidewall of the polysilicon gate electrode 140 has a germanium implanted region 170 located therein. The transistor 100 further includes source/drain regions 160 located within the semiconductor substrate 110 proximate the polysilicon gate electrode 140.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: October 10, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Kaiping Liu, Zhiqiang Wu, Majid Movahed Mansoorz